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| power matters. power portfolio 2012-2013 power semiconductors power modules rf power mosfets
coolmos comprise a new family of transistors developed by in?neon technologies ag. coolmos is a trademark of in?neon technologies ag aspm?, power mos v?, power mos 7? & t-max? are registered trademarks of microsemi corporation about microsemi microsemi corporation (nasdaq: mscc) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, fpgas, socs and asics; power management products; timing and voice processing devices; rf solutions; discrete components; security technologies and scalable anti-tamper products; power-over-ethernet ics and midspans; as well as custom design capabilities and services. microsemi is headquartered in aliso viejo, calif., and has approximately 3,000 employees globally. learn more at www.microsemi.com. contents high voltage smps transistors page no. igbts (insulated gate bipolar transistors) ......................................................................3-5 power mos 8 tm mosfets / fredfets ............................................................................6-8 ultra low gate charge mosfets ...................................................................................... 9 coolmos tm mosfets..................................................................................................... 10 high voltage linear mosfets ......................................................................................... 10 diodes sic schottky and ultra fast recovery diodes ............................................................11-13 high voltage rf mosfets ........................................................................................ 14 driver-rf mosfet hybrids ...................................................................................... 14 high frequency rf mosfets .................................................................................. 15 reference design kit .............................................................................................. 15 power modules contents ...................................................................................................................... .... 16 electrical con?guration ................................................................................................... 17 packaging ..................................................................................................................... ... 18 know how and capabilities .......................................................................................19-20 part numbering system ................................................................................................... 21 igbts (insulated gate bipolar transistors) ................................................................22-26 mosfets ....................................................................................................................27- 31 renewable energy power modules ............................................................................31-32 sic power modules.....................................................................................................33-35 diodes and recti?ers .................................................................................................36-38 package outline drawings .............................................................................. 39-43 3 insulated gate bipolar transistors (igbts) 10 20 30 40 50 60 70 80 90 100 110 120 igbt switching frequency ranges (khz, hard switched) 600v 1200v 900v thunderbolt ? npt thunderbolt ? npt thunderbolt ? high speed (hs) npt fast npt standard series voltage ratings (v) technology easy to parallel short circuit soa comment thunderbolt? 600, 1200 npt x x general purpose, high speed thundebolt? high speed 600 npt x x highest speed fast 1200 npt x x general purpose, medium speed mos 7? 1200 pt ultra-low gate charge mos 8? 600, 900, 1200 pt, npt highest ef?ciency field stop trench gate 600, 1200 field stop x x lowest conduction loss power mos 8 tm pt power mos 8 tm pt field stop field stop igbts from microsemi igbt products from microsemi provide high quality solutions for a wide range of high voltage, high power applications. the swi tching frequency range spans from dc for minimal conduction loss to over 100khz for very high power density smps applications. the fr e- quency range for each product type is shown in the graph below. each igbt product represents the latest in igbt technology, pr oviding the best possible performance/cost combination for the targeted application. there are six product series that utilize three d ifferent igbt technologies: non-punch-through (npt), punch-through (pt) and field stop. product options all standard igbt products are available as a single igbt or as a combi product packaged with an anti-parallel dq series diode. package options include to-220, to-247, t-max ? , to-264, and sot-227. customized products are available; contact factory for details. power mos 7 tm pt power mos 8 tm npt (new!) note: frequency ranges shown are typical for a 50a igbt. refer to product data sheet max frequency vs current graph for more informa tion. 4 2.5 25 25 21 apt25gr120b to-247 2.5 25 25 21 apt25gr120s d 3 2.5 40 38 28 apt40gr120b to-247 2.5 40 38 28 apt40gr120s d 3 2.5 50 48 36 apt50gr120b2 t-max ? 2.5 50 48 36 apt50gr120l to-264 1200 2.5 70 66 42 apt70gr120b2 t-max ? 2.5 70 66 42 apt70gr120l to-264 2.5 70 42 30 apt70gr120j isotop ? 2.5 85 72 46 apt85gr120b2 t-max ? 2.5 85 72 46 apt85gr120l to-264 2.5 85* 46 31 apt85gr120j isotop ? 2.5 25 25 21 apt25gr120bd15 to-247 (dq) 2.5 25 25 21 apt25gr120sd15 d3 (dq) 2.5 25 25 21 apt25gr120bscd10 to-247 (sic sbd) 2.5 25 25 21 apt25gr120sscd10 d3 (sic sbd) 1200 2.5 40 38 28 apt40gr120b2d30 t-max ? (dq) 2.5 40 38 28 apt40gr120b2scd10 t-max ? (sic sbd) 2.5 50* 42 32 apt50gr120jd30 isotop ? (dq) 2.5 70* 42 30 apt70gr120jd60 isotop ? (dq) 2.5 85* 46 31 apt85gr120jd60 isotop ? (dq) 2.0 36 21 17 apt36ga60b to-247 2.0 44 26 20 apt44ga60b to-247 600 2.0 54 30 23 apt54ga60b to-247 2.0 68 35 27 apt68ga60b to-247 2.0 80 40 31 apt80ga60b to-247 2.0 102 51 39 apt102ga60b2 t-max ? or to-264 2.5 35 17 10 apt35ga90b to-247 900 2.5 43 21 13 apt43ga90b to-247 2.5 64 29 19 apt64ga90b to-247 2.5 80 34 23 apt80ga90b to-247 or d 3 2.0 36 21 17 apt36ga60bd15 to-247 2.0 44 26 20 apt44ga60bd30 to-247 600 2.0 54 30 23 apt54ga60bd30 to-247 2.0 60 48 36 apt60ga60jd60 isotop ? 2.0 68 35 27 apt68ga60b2d40 t-max ? or to-264 2.0 80 40 31 apt80ga60ld40 to-264 2.5 27 14 8 apt27ga90bd15 to-247 2.5 35 17 10 apt35ga90bd15 to-247 900 2.5 43 21 13 apt43ga90bd30 to-247 2.5 46 33 21 apt46ga90jd40 isotop ? 2.5 64 29 19 apt64ga90b2d30 t-max ? or to-264 2.5 80 34 23 apt80ga90ld40 to-264 1.5 24 15 10 apt20gn60bg to-247 1.5 37 20 14 apt30gn60bg to-247 1.5 64 30 21 apt50gn60bg to-247 1.5 93 42 30 apt75gn60bg to-247 600 1.5 123 75 47 apt150gn60j isotop ? 1.5 135 54 39 apt100gn60b2g t-max ? 1.5 190 79 57 apt150gn60b2g t-max ? 1.5 230 103 75 apt200gn60b2g t-max ? 1.5 158 100 66 apt200gn60j isotop ? 1.7 33 19 13 apt25gn120bg to-247 or d 3 1.7 46 24 17 apt35gn120bg to-247 1.7 66 32 22 apt50gn120b2g t-max ? 1200 1.7 70 44 27 apt100gn120j isotop ? 1.7 99 45 30 apt75gn120b2g t-max ? or to-264 1.7 120 58 38 apt100gn120b2g t-max ? 1.7 99 60 36 apt150gn120j isotop ? datasheets available on www.microsemi.com all products rohs co mpliant bv ces v ce(on) i c2 maximum i c package volts typ 25 o c 100 o c at frequency part number style to-247[b] isotop ? [j] sot-227 t-max?[b2] c e g d 3 pak[s] to-264[l] 264-max tm [l2] s 0 4 4 e c h n o l o g y s & a s t 3 w i t c h i n g s ( i g h e s t % f l c i e n c y s # o m b i w i t h ( i g h 3 p e e d $ 1 $ i o d e part numbers for to-264 packages - replace "b2" with "l" in part number part numbers for d 3 packages - replace b with s in part number current @ frequency test conditions: tj = 125 o c, tc = 100 o c except isotop? where tc = 80 o c, vcc = 67% rated voltage hard switch 50 khz 80 khz 25 khz 50 khz combi (igbt & diode) 50 khz 80 khz power mos 8 tm single 50 khz 80 khz 25 khz 50 khz 25 khz 50 khz 50 khz 80 khz combi (igbt & dq fred) 25 khz 50 khz 15 khz 30 khz 10 khz 20 khz single s 4 r e n c h 4 e c h n o l o g y s 3 h o r t # i r c u i t 2 a t e d s , o w e s t # o n d u c t i o n , o s s s % a s y 0 a r a l l e l i n g s # o m b i w i t h ( i g h 3 p e e d $ 1 $ i o d e field stop s . 0 4 4 e c h n o l o g y s ( i g h 3 p e e d 3 w i t c h i n g s , o w 3 w i t c h i n g , o s s e s s % a s y t o 0 a r a l l e l new! 1200v insulated gate bipolar transistors (igbts) power mos 8 tm single ) c f o r ) 3 / 4 / 0 ? p a c k a g e s m e a s u r e d a t a # f o r 6 . 0 4 ) ' " 4 s 5 datasheets available on www.microsemi.com all products rohs co mpliant to-220[k] to-247[b] t-max ? [b2] to-264[l] isotop ? [j] sot-227 c e g d 3 pak[s] current @ frequency test conditions: tj = 125 o c, tc = 100 o c except isotop? where tc = 80 o c, vcc = 67% rated voltage hard switch part numbers for d 3 packages - replace "b" with "s" in part number part numbers for l packages - replace "b2" with "l" in part number s ( i g h 3 p e e d 3 w i t c h i n g 2 e d u c e d % o f f s & a s t e s t 3 w i t c h i n g s . 0 4 4 e c h n o l o g y thunderbolt? high speed s . 0 4 4 e c h n o l o g y s 3 h o r t # i r c u i t 2 a t e d s - o d e r a t e t o ( i g h & r e q u e n c y s % a s y 0 a r a l l e l i n g thunderbolt? insulated gate bipolar transistors (igbts) power mos 7? and igbt s 0 4 4 e c h n o l o g y s 5 l t r a l o w ' a t e # h a r g e s # o m b i w i t h ( i g h 3 p e e d $ 1 $ i o d e bv ces v ce(on) i c2 maximum i c package volts typ 25 o c 100 o c at frequency part number style 1.5 24 15 10 apt20gn60bdq1g to-247 1.5 37 20 14 apt30gn60bdq2g to-247 1.5 64 30 21 APT50GN60BDQ2G to-247 600 1.5 93 42 30 apt75gn60ldq3g to-264 1.5 123 75 47 apt150gn60jdq4 isotop ? 1.5 135 54 39 apt100gn60ldq4g to-264 1.5 190 79 57 apt150gn60ldq4g to-264 1.5 158 100 66 apt200gn60jdq4 isotop ? 1.7 22 14 10 apt15gn120bdq1g to-247 or d 3 1.7 33 19 13 apt25gn120b2dq2g t-max ? 1.7 46 24 17 apt35gn120l2dq2g 264-max? 1200 1.7 57 36 22 apt75gn120jdq3 isotop ? 1.7 66 32 22 apt50gn120l2dq2g 264-max? 1.7 70 44 27 apt100gn120jdq4 isotop ? 1.7 99 60 36 apt150gn120jdq4 isotop ? 3.3 33 19 12 apt25gp120bg t0-247 3.3 46 24 15 apt35gp120bg t0-247 3.3 54 29 18 apt45gp120bg t0-247 1200 3.3 34 28 18 apt45gp120j isotop 3.3 91 42 24 apt75gp120b2g t-max? 3.3 57 40 23 apt75gp120j isotop 3.3 20 11 7 apt13gp120bdq1g t0-247 3.3 33 19 12 apt25gp120bdq1g t0-247 1200 3.3 46 24 15 apt35gp120b2dq2g t-max? 3.3 54 29 18 apt45gp120b2dq2g t-max? 3.3 34 28 18 apt45gp120jdq2 isotop 3.3 57 40 23 apt75gp120jdq3 isotop 2.0 20 14 10 apt20gt60brg to-247 2.0 30 19 13 apt30gt60brg to-247 600 2.0 40 25 16 apt40gt60brg to-247 2.0 50 30 20 apt50gt60brg to-247 2.0 60 35 22 apt60gt60brg to-247 or d 3 2.0 100 56 35 apt100gt60b2rg t -max ? or to-264 2.0 200 72 -- apt200gt60jr isotop ? 3.2 18 11 8 apt15gt120brg to-247 3.2 25 16 11 apt25gt120brg to-247 1200 3.2 50 27 17 apt50gt120b2rg t-max ? or to-264 3.2 60 40 21 apt100gt120jr isotop ? 3.2 90 52 25 apt150gt120jr isotop ? 2.0 15 11 8 apt15gt60brdq1g to-247 2.0 20 14 10 apt20gt60brdq1g to-247 600 2.0 30 19 13 apt30gt60brdq2g to-247 2.0 50 30 20 apt50gt60brdq2g to-247 or d 3 2.0 100 37 22 apt100gt60jrdq4 isotop ? 3.2 18 11 8 apt15gt120brdq1g to-247 3.2 25 16 11 apt25gt120brdq2g to-247 1200 3.2 50 27 17 apt50gt120b2rdq2g t-max ? or to-264 3.2 42 34 19 apt75gt120jrdq3 isotop ? 3.2 60 40 21 apt100gt120jrdq4 isotop ? 600 2.8 50 23 16 apt50gs60brg to-247 600 2.8 30 14 9 apt30gs60brdq2g to-247 2.8 50 23 16 apt50gs60brdq2g to-247 2.5 14 8 5 apt11gf120krg to-220 2.5 20 11 7 apt20gf120krg to-220 1200 2.5 35 16 10 apt33gf120brg to-247 2.5 75 27 17 apt50gf120b2rg t-max ? 2.5 75 27 17 apt50gf120lrg to-264 combi (igbt & "dq" fred) 10 khz 20 khz 20 khz 40 khz 20 khz 40 khz combi (igbt & "dq" fred) single 15 khz 30 khz 30 khz 60 khz single 20 khz 40 khz 30 khz 60 khz combi (igbt & "dq" fred) 20 khz 40 khz 50 khz 80 khz single 50 khz 80 khz combi (igbt & "dq" fred) 15 khz 30 khz single 6 power mos 8 tm mosfets / fredfets (fast body diode) tm features s & a s t s w i t c h i n g s ! v a l a n c h e e n e r g y r a t e d s , o w % - ) s , o w g a t e c h a r g e s 1 u i e t s w i t c h i n g s , o w e r c o s t applications s 0 o w e r f a c t o r c o r r e c t i o n s ! r c w e l d i n g s 3 e r v e r a n d t e l e c o m p o w e r s y s t e m s s 0 l a s m a c u t t i n g s 3 o l a r i n v e r t e r s s " a t t e r y c h a r g e r s s 3 e m i c o n d u c t o r c a p i t a l e q u i p m e n t s - e d i c a l s ) n d u c t i o n h e a t i n g power mos 8? is microsemi's latest family of high speed, high voltage (500-1200v) n-channel switch-mode power transistors with lower emi characteristics and lower cost compared to previous generation devices. these new mosfets / fredfets have been optimized for both hard and soft switching in high frequency, high voltage applications rated above 500w. there are 2 product types in the power mos 8? mosfet family: 1) mosfet 2) fredfets have a fast recovery body diode characteristic, providing high commutation dv/dt ruggedness and high reliability in zvs circuits. quiet switching the new power mos 8? series is a result of extensive research into quiet switching. input and reverse transfer capaci- tance values as well as their ratio were set at speci?c values to achieve quiet switching with minimal switching loss. the power mos 8? series of devices are inherently quiet switching, stable when connected in parallel, very ef?cient, and lower cost than previous generations. body diode options as with previous generation products, power mos 8? mosfets and fredfets are available in all voltage ratings. a fredfet is a mosfet with a faster recovery intrinsic body diode. this results in improved reliability in zvs circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. if a fast recovery body diode is not needed, mosfet versions are available. 2.5 35 16 10 apt33gf120b2rdq2g t-max? 1200 2.5 64 33 17 apt50gf120jrdq3 isotop? 2.5 80 42 20 apt60gf120jrdq3 isotop? 2.8 50 23 16 apt50gs60brdlg to-247 2.8 30 14 9 apt30gs60brdlg to-247 600 2.2 50 41 31 apt50gp60ldl to-264 2.2 45 28 22 apt30gp60b2dl t-max? or to-264 2.2 25 17 14 apt15gp60bdl to-247 1200 3.2 50 28 17 apt50gt120b2rdl t-max? 3.2 100 40 21 apt100gt120jrdl isotop? bv ces v ce(on) i c2 maximum i c package volts typ 25 o c 100 o c at frequency part number style 15 khz 30 khz combi (igbt & "dq" fred) 50 khz 80 khz combi (igbt & "dl" fred) 20 khz 40 khz s . 0 4 4 e c h n o l o g y s 3 h o r t # i r c u i t 2 a t e d s , o w t o - o d e r a t e & r e q s , o w # o n d u c t i o n , o s s s % a s y 0 a r a l l e l i n g fast insulated gate bipolar transistors (igbts) 7 datasheets available on www.microsemi.com all products rohs c ompliant d 3 pak[s] isotop ? [j] sot-227 (isolated base) to-264[l] t-max?[b2] part numbers for d 3 packages - replace "b with s in part number part numbers for to-264 packages - replace "b2" with "l" in part number bv (dss) volts r ds(on) max i d mosfet part # i d fredfet part # package style 1200 3.80 5 apt4m120k to-220 4.20 4 apt4f120k to-220 2.40 7 apt7f120b to-247 or d 3 2.10 8 apt7m120b to-247 1.20 14 apt13f120b to-247 or d 3 1.10 14 apt14m120b to-247 0.70 23 apt22f120b2 t-max? or to-264 0.63 24 apt24m120b2 t-max? or to-264 0.58 27 apt26f120b2 t-max? or to-264 0.58 18 apt17f120j isotop? 0.53 29 apt28m120b2 t-max? or to-264 0.53 19 apt19m120j isotop? 0.32 33 apt32f120j isotop? 0.29 35 apt34m120j isotop? 1000 2.80 5 apt5f100k to-220 2.50 6 apt6m100k to-220 2.00 7 apt7f100b to-247 1.80 8 apt8m100b to-247 1.60 9 apt9f100b to-247 or d 3 1.40 9 apt9m100b to-247 0.98 14 apt14f100b to-247 or d 3 0.88 14 apt14m100b to-247 or d 3 0.78 17 apt17f100b to-247 or d 3 0.70 18 apt18m100b to-247 0.44 30 apt29f100b2 t-max? or to-264 0.44 20 apt19f100j isotop? 0.38 32 apt31m100b2 35 apt34f100b2 t-max? or to-264 0.38 21 apt21m100j 23 apt22f100j isotop? 0.33 37 apt37m100b2 t-max? or to-264 0.33 25 apt25m100j isotop? 0.20 42 apt41f100j isotop? 0.18 45 apt45m100j isotop? 800 1.50 7 apt7f80k to-220 1.35 8 apt8m80k to-220 0.90 12 apt11f80b to-247 or d 3 0.80 13 apt12m80b to-247 0.58 18 apt17f80b to-247 or d 3 0.53 19 apt18m80b to-247 or d 3 0.43 23 apt22f80b to-247 or d 3 0.39 25 apt24m80b to-247 or d 3 0.24 41 apt38f80b2 t-max? or to-264 0.21 43 apt41m80b2 47 apt44f80b2 t-max? or to-264 0.21 31 apt29f80j isotop? 0.19 49 apt48m80b2 t-max? or to-264 0.19 33 apt32m80j isotop? 0.11 57 apt53f80j isotop? 0.10 60 apt58m80j isotop? to-247[b] to-220[k] power mos 8 tm mosfets / fredfets 8 datasheets available on www.microsemi.com all products rohs co mpliant bv (dss) volts r ds(on) max i d mosfet part # i d fredfet part # package 600 0.62 12 apt12f60k to-220 0.43 16 apt15f60b to-247 or d 3 0.37 19 apt18f60b to-247 or d 3 0.29 24 apt23f60b to-247 or d 3 0.22 30 apt28f60b to-247 or d 3 0.19 36 apt34m60b 36 apt34f60b to-247 0.15 45 apt43m60b2 45 apt43f60b2 t-max? or to-264 0.15 31 apt30m60j 31 apt30f60j isotop? 0.11 60 apt56m60b2 60 apt56f60b2 t-max? or to-264 0.11 42 apt39m60j 42 apt39f60j isotop? 0.09 70 apt66m60b2 70 apt66f60b2 t-max? or to-264 0.09 49 apt47m60j 49 apt47f60j isotop? 0.055 84 apt80m60j 84 apt80f60j isotop? 500 0.39 15 apt15f50k to-220[k] or to-220[kf]* 0.30 20 apt20f50b to-247 or d 3 0.24 24 apt24f50b to-247 or d 3 0.19 30 apt30f50b to-247 or d 3 0.15 37 apt37f50b to-247 or d 3 0.13 43 apt42f50b to-247 or d 3 0.10 56 apt56m50b2 56 apt56f50b2 t-max? or to-264 0.10 38 apt38m50j 38 apt38f50j isotop? 0.075 75 apt75m50b2 75 apt75f50b2 t-max? or to-264 0.075 51 apt51m50j 51 apt51f50j isotop? 0.062 84 apt84m50b2 84 apt84f50b2 t-max? or to-264 0.062 58 apt58m50j 58 apt58f50j isotop? 0.036 103 apt100m50j 103 apt100f50j isotop? 300 0.085 40 apt30m85bvrg 40 apt30m85bvfrg to-247 0.070 48 apt30m70bvrg 48 apt30m70bvfrg to-247 or d 3 0.040 70 apt30m40jvrg 70 apt30m40jvfrg isotop? 0.019 130 apt30m19jvr 130 apt30m19jvfr isotop? 200 0.045 56 apt20m45bvrg 56 apt20m45bvfrg to-247 0.038 67 apt20m38bvrg 37 apt20m38bvfrg to-247 or d 3 or t/r 0.022 100 apt20m22b2vrg 100 apt20m22b2vfrg t-max? or to-264 0.011 175 apt20m11jvr 175 apt20m11jvfr isotop? to-247[b] d 3 pak[s] isotop ? [j] sot-227 (isolated base) to-264[l] t-max?[b2] to-220[k] or to-220[kf]* part numbers for d 3 packages - replace "b" with "s" in part number power mos 8 tm mosfets / fredfets low voltage power mos v ? mosfets / fredfets part numbers for to-264 packages - replace "b2" with "l" in part number * available on apt15f50k 9 datasheets available on www.microsemi.com all products rohs co mpliant bv (dss) volts r ds(on) max i d mosfet part # fredfet part # package style 1200 4.700 3.5 apt1204r7kfllg t0-220 4.700 3.5 apt1204r7bfllg t0-247 or d 3 1.400 9 apt1201r4bfllg t0-247 0.670 18 apt12067b2llg t-max? 0.670 17 apt12067jll isotop? 0.570 22 apt12057b2llg t-max? 0.570 19 apt12057jll isotop? 1000 0.900 12 apt10090bllg t0-247 0.780 14 apt10078bllg t0-247 or d 3 0.450 23 apt10045b2llg t-max? or to-264 0.450 21 apt10045jll isotop? 0.350 28 apt10035b2llg t-max? 0.350 25 apt10035jll isotop? 0.260 38 apt10026l2fllg to-264 max 0.260 30 apt10026jll apt10026jfll isotop? 0.210 37 apt10021jll apt10021jfll isotop? 0.140 52 apt8014l2lllg apt8014l2fllg to-264 max 0.110 51 apt8011jll apt8011jfll t-max? or t0-264 800 0.200 38 apt8020b2ll t-max? 0.200 33 apt8020jll isotop? or d 3 or t/r 500 0.140 35 apt5014bllg to-247 0.100 46 apt5010b2llg apt5010b2fllg t-max? or to-264 0.065 67 apt50m65b2llg apt50m65b2fllg t-max? or to-264 0.065 58 apt50m65jllg apt50m65jfllg isotop? 0.075 51 apt50m75jll apt50m75jfll isotop? 0.075 57 apt50m75b2llg t-max? or to-264 0.050 71 apt50m50jll isotop? 0.038 88 apt50m38jll isotop? z series gate resistance (rg) <0.1 ohm z fast switching, uniform signal propagation z tr and tf times of <10ns z pulse power applications z industry's lowest gate charge z fast switching, reduced gate drive power isotop ? [j] sot-227 (isolated base) to-247[b] t-max?[b2] for 250 khz - 2 mhz switching applications ultrafast, low gate charge mosfets features: benefits: the ultrafast, low gate charge mosfet family combines the lowest gate charge available in the industry with microsemis proprietary self-aligned aluminum metal gate structure. the re- sult is a mosfet capable of extremely fast switching speeds and very low switching losses. the metal gate structure and the layout of these chips provide an internal series gate resistance (egr) an order of magnitude lower than competitive devices built with a polysilicon gate. these devices are ideally suited for high frequency and pulsed high voltage applications. typical applications: s # l a s s $ a m p l i l e r s u p t o - ( z s ( i g h v o l t a g e p u l s e d $ # s ! - t r a n s m i t t e r s s 0 l a s m a d e p o s i t i o n e t c h 10 bv dss r ds(on) i d(cont) package volts ohms amps part number style 900 0.120 36 apt36n90bc3g to-247 0.450 11 apt11n80kc3g to-220 0.450 11 apt11n80bc3g to-247 800 0.145 34 apt34n80b2c3g t-max? or to-264 0.145 34 apt34n80lc3g to-264 650 0.035 94 apt94n65b2c3g t-max? or to-264 0.070 47 apt47n65bc3g to-247 or d 3 0.070 47 apt47n60bc3g to-247 or d 3 600 0.035 77 apt77n60jc3 isotop? 0.042 94 apt94n60l2c3g 264-max? 0.045 60 apt60n60bcsg to-247 or d 3 or t/r 0.041 77 apt77n60bc6 to-247 or d 3 0.070 53 apt53n60bc6 to-247 or d 3 600 0.099 38 apt38n60bc6 to-247 or d 3 0.125 30 apt30n60kc6 to-220 0.125 30 apt30n60bc6 to-247 or d 3 0.035 106 apt106n60b2c6 t-max? or t0-264 650 0.041 85 apt97n65b2c6 t-max? or t0-264 0.035 94 apt94n65b2c6 t-max? datasheets available on www.microsemi.com all products rohs com pliant bv dss r ds(on) i d(cont) soa volts ohms amps watts part number package style 1000 0.600 18 325 apl1001j 600 0.125 49 325 apl602b2g 0.125 43 325 apl602j 500 0.090 58 325 apl502b2g 0.090 52 325 apl502j d 3 pak[s] to-268 to-247[b] to-264[l] isotop ? [j] sot-227 (isolated base) t-max?[b2] to-220[k] isotop ? [j] sot-227 (isolated base) to-264[l] t-max?[b2] 264-max? [l2] c3 technology server series part numbers for to-264 packages - replace b2 with l in part number what is a linear mosfet? a mosfet speci?cally designed to be more robust than a standard mosfet when operated with both high voltage and high current near dc conditions (>100msecs). the problem with smps mosfets mosfets optimized for high frequency smps applications have poor high voltage dc soa. most smps type mosfets over-state soa capability at high voltage on the data sheets. above ~30v and dc conditions, soa drops faster than is indicated by p d limited operation. for pulsed loads (t<10ms) there is generally no problem using a standard mosfet. technology innovation introduced in 1999, microsemi modi?ed its proprietary patented self-aligned metal gate mosfet technology for enhanced performance in high voltage, linear applications. these linear mosfets typically provide 1.5-2.0 times the dc soa capability at high voltage compared to other mosfet technologies optimized for switching applications. designers will need linear mosfets when s ( i g h # u r r e n t 6 m s e c s 5 s e d a s a v a r i a b l e p o w e r r e s i s t o r s 3 o f t s t a r t a p p l i c a t i o n l i m i t s u r g e c u r r e n t s s , i n e a r a m p l i l e r c i r c u i t typical applications s ! c t i v e l o a d s a b o v e v o l t s s u c h a s $ # d y n a m i c loads for testing power supplies, batteries, fuel cells, etc. s ( i g h v o l t a g e h i g h c u r r e n t c o n s t a n t c u r r e n t s o u r c e s coolmos tm mosfets linear mosfets c6 technology new! coolmos comprise a new family of transistors developed by in?neon technologies ag. coolmos is a trademark of in?neon technologies ag 11 series voltage ratings features applications comment dl 600 low v f ultra-soft recovery avalanche rated output recti?er resonant circuits ultra-soft recovery minimizes or eliminates snubber d 200, 300, 400, 600, 1000, 1200 medium v f medium speed freewheeling diode output recti?er dc-dc converter proprietary platinum process dq 600, 1000, 1200 high speed avalanche rated pfc freewheeling diode dc-dc converter stepped epi improves softness proprietary platinum process ds 600 very high speed high frequency pfc proprietary platinum process schottky 200 low v f avalanche rated output recti?er freewheeling diode dc-dc converter the graph below shows the relative recovery speed and forward voltage positions of 600v dl, d, dq and ds series diodes. ultra fast recovery diodes microsemi ppg offers ?ve series of discrete diode products: a new dl series low vf ultra-soft recovery, the medium speed medium vf d series, the high speed dq series, the very high speed ds series, and the silicon schottky s series. these series of diodes are designed to provide high quality solutions to a wide range of high voltage, high power application requirements, ranging from fast recov ery for continuous conduction mode power factor correction to low conduction loss for output recti?cation. distinguishing features, te chnology used, and applications for each product family are summarized in the table below. 12 datasheets available on www.microsemi.com all products rohs com pliant sic schottky diodes part numbers for d 3 pack- ages - replace b with s in part number single at i f = i f (avg) to-247[b] t o - 247 d 3 pak[s] to-268 to-220[k] t-max?[b2] tandem, ds diodes for pfc boost applications (2, 300v diodes connected in series) i f (avg) v f (volts) t rr (ns) q rr (nc) diode package volts amps typ 25 o c typ 25 o c typ 125 o c series part number style 15 2.8 21 960 dq apt15dq120bg to-247 15 2.8 21 960 dq apt15dq120kg to-220 15 2.0 32 1300 d apt15d120bg to-247 15 2.0 32 1300 d apt15d120kg to-220 30 2.8 24 1800 dq apt30dq120bg to-247 1200 30 2.8 24 1800 dq apt30dq120kg to-220 30 2.0 31 3450 d apt30d120bg to-247 40 2.8 26 2200 dq apt40dq120bg to-247 60 2.8 30 2800 dq apt60dq120bg to-247 60 2.0 38 4000 d apt60d120bg to-247 or d 3 75 2.8 32 3340 dq apt75dq120bg to-247 15 2.5 20 810 dq apt15dq100bg to-247 15 2.5 20 810 dq apt15dq100kg to-220 15 1.9 28 1550 d apt15d100kg to-220 30 2.5 22 1250 dq apt30dq100bg to-247 1000 30 2.5 22 1250 dq apt30dq100kg to-247 30 1.9 29 2350 d apt30d100bg to-247 40 2.5 24 1430 dq apt40dq100bg to-247 60 2.5 29 2325 dq apt60dq100bg to-247 60 1.9 34 3600 d apt60d100bg to-247 or d 3 75 2.5 33 2660 dq apt75dq100bg to-247 15 2.0 16 250 dq apt15dq60bg to-247 15 2.0 16 250 dq apt15dq60kg to-220 15 1.6 21 520 d apt15d60bg to-247 15 1.6 21 520 d apt15d60kg to-220 30 2.0 19 400 dq apt30dq60bg to-247 600 30 2.0 19 400 dq apt30dq60kg to-220 30 1.6 23 700 d apt30d60bg to-247 40 2.0 22 480 dq apt40dq60bg to-247 60 2.0 26 640 dq apt60dq60bg to-247 60 1.6 40 920 d apt60d60bg to-247 or d 3 75 2.0 29 650 dq apt75dq60bg to-247 100 1.25 45 3800 dl apt100dl60bg to-247 30 1.3 22 360 d apt30d40bg to-247 400 60 1.3 30 540 d apt60d40bg to-247 30 1.1 21 150 d apt30d20bg to-247 30 0.83 25 448 schottky apt30s20bg to-247 or d 3 200 60 1.1 30 250 d apt60d20bg to-247 60 0.83 35 490 schottky apt60s20bg to-247 or d 3 or t/r 100 0.89 40 690 schottky apt100s20bg to-247 600 15 3.2 13 85 ds apt15ds60bg to-247 30 3.2 17 180 ds apt30ds60bg to-247 volts i f (avg) amps v f volts typ 25 c diode series part number package style single 1200 10 1.5 scd apt10scd120b to-247 10 1.5 scd apt10scd120k to-220 20 1.5 scd apt20scd120b to-247 20 1.5 scd apt20scd120s d 3 30 1.5 scd apt30scd120b to-247 30 1.5 scd apt30scd120s d 3 dual 1200 10 1.5 scd apt10scd120bct to-247 new! sic schottky diodes ultra fast recovery diodes 13 *current ratings per leg ++ parallel form only datasheets available on www.microsemi.com all products rohs compliant at i f = i f (avg) to-247[bct] *common cathode 4 / 4 - a x 4 / 4 / 4 / to-247[bhb] *half bridge to-247[bca] *common anode to-264[lct] *common cathode t-max ? [b2ct] *common cathode to-220[kct] *common cathode isotop ? [j] sot-227 antiparallel con?guration (isolated base) part numbers for parallel con?guration replace 30, 60, or 100 with 31, 61, or 101. except schottky example: 2x30d120j becomes 2x31d120j dual ultra fast recovery diodes i f (avg) v f (volts) t rr (ns) q rr (nc) diode package volts amps typ 25 o c typ 25 o c typ 125 o c series part number style 2x27 2.0 31 3450 d apt2x30d120j 2x30 2.6 25 1800 dq apt2x30dq120j 2x53 2.0 38 4000 d apt2x60d120j 1200 2x60 2.5 30 2890 dq apt2x60dq120j 2x93 2.0 47 5350 d apt2x100d120j 2x100 2.4 45 5240 dq apt2x100dq120j 2x28 1.9 29 2350 d apt2x30d100j 2x55 1.9 34 3600 d apt2x60d100j 1000 2x60 2.2 30 2350 dq apt2x60dq100j 2x95 1.9 43 4050 d apt2x100d100j 2x100 2.1 45 3645 dq apt2x100dq100j 2x30 1.8 20 400 dq apt2x30dq60j 2x30 1.6 23 700 d apt2x30d60j isotop? 600 2x60 1.7 27 650 dq apt2x60dq60j 2x60 1.6 40 920 d apt2x60d60j 2x100 1.6 30 980 dq apt2x100dq60j 2x100 1.6 34 1450 d apt2x100d60j 2x150 1.25 53 3800 dl apt2x150dl60j 2x30 1.3 22 360 d apt2x30d40j 400 2x60 1.3 30 540 d apt2x60d40j 2x100 1.3 37 1050 d apt2x100d40j 2x100 1.0 40 3550 dl apt2x101dl40j ++ 300 2x100 1.2 36 650 d apt2x101d30j 2x30 0.80 25 448 schottky apt2x31s20j 200 2x60 0.83 35 490 schottky apt2x61s20j 2x100 1.1 39 840 d apt2x100d20j 2x100 0.89 40 690 schottky apt2x101s20j 1200 2x30 2.8 26 2100 dq apt30dq120bctg to-247 [bct] 2x15 2.5 20 810 dq apt15dq100bctg to-247 [bct] 2x15 1.9 28 1550 d apt15d100bctg to-247 [bhb] 2x30 1.9 29 2360 d apt30d100bctg to-247 [bhb] 1000 2x30 1.9 30 2350 d apt30d100bhbg to-247 [bca] 2x60 2.5 29 2325 dq apt60dq100lctg to-264 [lct] 2x60 1.9 35 3600 d apt60d100lctg to-264 [lct] 2x15 1.6 21 520 d apt15d60bctg t0-247 2x15 2.0 15 250 dq apt15dq60bctg to-247 [bct] 2x15 1.6 20 520 d apt15d60bcag to-247 [bca] 2x30 2.0 22 480 dq apt30dq60bhbg to-247 [bhb] 2x30 2.0 19 400 dq apt30dq60bctg to-247 [bct] 600 2x30 1.6 23 700 d apt30d60bctg to-247 [bct] 2x30 1.6 25 700 d apt30d60bhbg to-247 [bhb] 2x30 1.6 25 700 d apt30d60bcag to-247 [bca] 2x40 2.0 22 480 dq apt40dq60bctg to-247 [bct] 2x60 2.0 26 640 dq apt60dq60bctg to-247 [bct] 2x60 1.6 30 920 d apt60d60lctg to-264 [lct] 2x30 1.3 22 360 d apt30d40bctg to-247 [bct] 400 2x60 1.3 30 540 d apt60d40lctg to-264 [lct] 300 2x30 1.2 25 1300 d apt30d30bctg to-247 [bct] 2x30 1.1 21 150 d apt30d20bctg to-247 [kct] 2x30 1.1 21 150 d apt30d20bcag to-247 [bca] 2x30 0.80 25 448 schottky apt30s20bctg to-247 [bct] 200 2x60 0.83 35 490 schottky apt60s20b2ctg t-max ? [b2ct] 2x100 0.89 40 690 schottky apt100s20lctg to-264[lct] 14 pout freq. v dd /bv dss e jc package part class of (w) (mhz) (v) ( o c/w) style number operation 90 120 150v/450v 0.76 to-247 arf449ag/bg c-e 100 100 125v/500v 0.70 to-247 arf463ag/bg a-e 100 125v/500v 0.70 to-247 arf463ap1g/bp1g a-e 140 65 250v/900v 0.55 to-247 arf446g c-e 65 250v/900v 0.55 to-247 arf447g c-e 65 150v/450v 0.55 to-247 arf448ag/bg c-e 150 65 125v/500v 0.50 to-247 arf460ag/bg a-e 65 250v/1kv 0.50 to-247 arf461ag/bg a-e 60 300v/1.2kv 0.50 to-247 arf465ag/bg a-e 150 150 165v/500v 0.60 m174 arf521 a-e 300 150 165v/500v 0.35 m208 arf473 a-e 150 165v/500v 0.31 t3a arf475fl a-e 150 165v/500v 0.31 t3c arf476fl a-e 45 200v/1kv 0.35 to-264 arf466ag/bg a-e 300 45 200v/1kv 0.13 t3 arf466fl a-e 400 65 165v/500v 0.18 t3c arf477fl a-e 750 25 250v/1000v 0.13 t2 arf1519 a-e 750 40 125v/500v 0.12 t1 arf1500 a-e 40 250v/1kv 0.12 t1 arf1501 a-e 40 300v/1.2kv 0.12 t1 arf1505 a-e 750 40 400v/1000v 0.12 t1 arf1510 d 40 380v/500v 0.12 t1 arf1511 d datasheets available on www.microsemi.com all products rohs c ompliant d s s g g s s s s $ r a i n 3 o u r c e 3 o u r c e ' a t e the arf family of rf power mosfets are optimized for applications requiring frequencies as high as 150mhz and operating voltage s as high as 400v. historically, rf power mosfets were limited to applications of 50v or less. this limitation has been removed by combining microsemi's high voltage mosfet technology with rf speci?c die geometries. why higher voltage? higher v dd means higher load impedance. for 150w output from a 50v supply the load impedance is only 8 ohms. at 125v, the load impedance is 50 ohms. the higher impedance allows simpler transformers and combiners. paralleled devices ca n still operate into reasonable and convenient impedances. the increased operating voltage also lowers the dc current required for any given power output increasing ef?ciency and reducing the size, weight and cost of other system components. to-247 to-264 t1 t2 t3a t3b m208 m113 / m174 / m177 t4 t2b t2 backside t11 high voltage rf mosfets t3c t3 drivers and driver-rf mosfet hybrids the drf1200/01/02/03 hybrids integrates driver, bypass capacitors and rf mosfets into a single package. integration maximizes ampli?er performance by minimizing transmission line parasitics between the driver and mosfet. the drf1300 or drf1301 has two independent channels, each containing a driver and rf mosfet in a push pull con?guration. the drf1400a and b are half bridge hybrids with symmetrically orientated leads so that the two can easily be con?gured into a full bridge converter. all dr f parts feature a proprietary anti-ring function to eliminate cross conduction in a bridge or push-pull topologies. all drf parts can b e externally selected in either an inverting or non-inverting con?guration. p d freq. v dd /bv dss e jc package part class of description (w) (mhz) (v) ( o c/w) style number operation 600 30 15v/1000v 1.00 t2b drf1200 d-e driver and high voltage rf mosfet 1060 30 15v/1000v .025 t2b drf1201 d-e driver and high voltage/high power rf mosfet 1060 30 15v/500v .025 t2b drf1202 d-e driver and high power rf mosfet 600 30 15v/1000v 0.09 t2b drf1203 d-e driver and high voltage rf mosfet 1000 30 15v/500v 0.06 t4 drf1300 d-e 2 drivers/rf mosfets in push-pull con?guration 1000 30 15v/1000 0.06 t4 drf1301 d-e 2 drivers/rf mosfets in push-pull con?guration 1500 30 15v/500 0.06 t4 drf1400 d-e 2 drivers/rf mosfets in a h bridge con?guration 15 datasheets available on www.microsemi.com all products rohs compliant excluding reference design kits high frequency rf mosfets the vrf family of rf mosfets are improved replacements for industry standard rf transistors. they provide improved ruggedness by increasing the bv dss over 30% from the industry standard of 125 volts to 170v minimum. low cost ?angeless packages are another im- provement that show microsemi's dedication to optimizing performance, reducing cost and improving reliability. we will continu e to offer a greater number of product offerings in the new reduced-cost ?angeless packages. reference design kits drf1200/class-e, 13.56 mhz drf1200/class-e, 27.12 mhz the drf1200/class-e single ended rf generator is a reference design providing the designer the ability to evaluate an 85% ef?cient 1000w class-e rf generator drf1300/class-d, 13.56 mhz the drf1300/class-d push pull rf generator is a reference design providing the designer the ability to evaluate an 80% ef?cient 2000w class-d rf generator all kits include: a fully populated board attached to an aluminum heat sink. an extensive application note explaining the the ory of op- eration with desginers recommendations for evaluation and board layout. all key waveforms are illustrated and described. a co mplete parts list with recommended vendor part numbers and the board's gerber ?le are provided for an easy transition into an end appl ication. drf1400/class-d, 13.56 mhz the drf1400/class-d half bridge rf generator is a reference design providing the designer the ability to evaluate an 85% ef?cient 2500w class- d rf generator pout freq. gain d v dd /bv dss coss vswr e jc case part min typ typ typ load ( o c/w) style number (w) (mhz) (db) (%) (v) (pf) 150 175 13 45 28v/80v 375 30:1 0.60 m174 vrf141 30 175 16 50 50v/170v 40 30:1 1.52 m113 vrf148a 150 150 11 50 50v/170v 210 30:1 0.60 m174 vrf150 150 175 14 50 50v/170v 200 30:1 0.60 m174 vrf151 300 175 14 55 28/80 375 5:1 0.35 m208 vrf141g 300 175 16 55 50v/170v 200 5:1 0.35 m208 vrf151g 150 175 14 50 50v/130v 215 30:1 0.60 m174 vrf152 600 30 17 45 50v/170v 775 - 0.13 t2 vrf154fl 600 30 21 45 50v/170v 810 - 0.13 t2 vrf157fl 300 30 21 50 50v/170v 400 3:1 0.27 m177 vrf2933 16 power modules contents igbt power modules power module information .................................... 17-21 boost and buck chopper ........................................ 22-23 phase leg ..................................................... 22-23 3 phase bridge ................................................... 23 phase leg for welding application .................................... 24 triple phase leg ................................................. 24 triple dual common source ...................................... 24 interleaved pfc ................................................. 24 dual chopper ................................................... 24 full & asymmetrical bridge ...................................... 25 single switch ................................................... 26 single switch + series diode ...................................... 26 dual common source ............................................ 26 intelligent power modules phase leg ....................................................... 26 mosfet power modules boost and buck chopper .......................................... 27 dual chopper ................................................... 27 full bridge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 full bridge + series and parallel diodes ........................... 28 asymmetrical bridge ............................................ 28 phase leg ....................................................... 29 phase leg + series and parallel diodes ............................ 29 phase leg + series diodes ......................................... 29 triple phase leg ................................................. 29 triple dual common source ...................................... 30 dual common source ............................................ 30 single switch ................................................... 30 single switch + series diode ...................................... 30 single switch + series and parallel diodes ......................... 30 interleaved pfc ................................................. 30 single and dual linear mosfet .................................... 31 renewable energy power modules full bridge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 pfc + bypass diode + phase leg .................................... 31 pfc + full bridge ................................................ 31 pfc + bypass diode + full bridge .................................. 31 secondary fast rectifier + full bridge ............................ 31 boost buck ..................................................... 32 3- level npc inverter ............................................. 32 t-type 3-level inverter ........................................... 32 sic diode power modules dual diode ...................................................... 33 full bridge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 igbt + sic diode power modules boost chopper .................................................. 33 dual chopper ................................................... 33 mosfet + sic diode power modules single switch + series fred and sic parallel diodes ................. 34 chopper ........................................................ 34 dual chopper ................................................... 34 phase leg + series fred and sic parallel diodes ..................... 34 full bridge + series fred and sic parallel diodes ................... 34 triple phase leg ................................................. 34 sic mosfet power modules phase leg ....................................................... 35 t-type 3-level inverter ........................................... 35 3-level npc inverter ............................................. 35 boost chopper .................................................. 35 diode power modules single diode .................................................... 36 single diode - non isolated package ............................... 36 3-phase bridge .................................................. 36 3-phase bridge + thyristor ....................................... 36 full bridge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 thyristor & diode doubler ....................................... 37 common cathode - common anode - doubler ...................... 38 package outlines drawings ....................................... 40-43 microsemi combines a formidable array of technologies in semiconductors, packag- ing and automated manufacturing to produce a wide range of high quality modules optimized for: s 2 e l i a b i l i t y s % f l c i e n c y a n d e l e c t r i c a l p e r f o r m a n c e s , o w c o s t s 3 p a c e s a v i n g s s 2 e d u c e d a s s e m b l y t i m e the readily available standard module product line spans a wide selection of circuit toplogies, semiconductors including silicon carbide, voltage and current ratings and packages. if you need even more ?exibility or intellectual property protection, microsemi can often customize a standard module with low set up cost and with a short lead time. unique requirements can be met with application speci?c power modules (aspm?). microsemi serves a broad spectrum of inductrial applications for welding, solar, induction heating, medical, ups, motor control and smps markets as well as hi-rel applications for semicap, defense and aerospace markets. a wide selection of construction materials enables microsemi to manufacture with short lead times modules that feature: s % x t e n d e d t e m p e r a t u r e r a n g e a # t o a # s ( i g h r e l i a b i l i t y s 2 e d u c e d s i z e a n d w e i g h t s ( i 2 e l t e s t i n g a n d s c r e e n i n g o p t i o n s microsemi's experience and expertise in power electronic conversion brings the most effective technical support for your new development. s ) s o l a t e d g a t e d r i v e r s 3 n u b b e r s s - i x m a t c h s e m i c o n d u c t o r s s 3 h o r t c i r c u i t p r o t e c t i o n s 4 e m p e r a t u r e c u r r e n t s e n s i n g s 0 a r a m e t e r b i n n i n g 17 standard electrical con?gurations electrical topology igbt 600v to 1700v mosfet 75v to 1200v diode 30v to 1700v mix si-sic 600 & 1200v full sic 600 & 1200v asymmetrical bridge xx boost buck x x boost & buck chopper xx xx common anode x common cathode x dual boost & buck chopper xx x dual common source x x dual diode x full bridge x x x x full bridge + pfc x x x full bridge + secondary fast recti?er bridge xx x full bridge + series and parallel diodes xx interleaved pfc x x linear single and dual switch x phase leg xxx x phase leg intelligent x phase leg + pfc xx phase leg + series and parallel diodes xx single switch xxx single switch + series and parallel diodes xx single switch + series diodes xx 3-level npc inverter x x 3-level t-type inverter xx 3-phase bridge xx triple dual common soure xx triple phase leg xx x npt mosfet schottky igbt diode trench3 fredfet fred mosfet mosfet trench4 coolmos std recti?er diode trench4 fast thyristor microsemi pmp offers a wide range of standard electrical con?gurations housed in various packages and capable to respond to man y power conversion demands asking for high power density and performance. same topology can be offered with different semiconductors type. 18 packaging d3 d1 sot-227 d4 sp4 sp3 sp6-p sp1 industry standard packages improved low pro?le packages sp1 (12mm) sp3 (12mm) sp4 (17mm) sp6 (17mm) sp6-p (12mm) sot-227 (isotop ? ) sp2 (17mm) 34mm & 62mm types d1 (34 mm wide) d3 (62 mm wide) d4 (62 mm wide) isotop ? sp6 - apt module 12 mm s p m odu l e package advantages sp6-p package: -replaces up to 6 sot-227 parts -height compatible with sot-227 -low inductance solder pins -high current capability 30 mm 17 mm sp6 package: offers the same footprint and the same pinout location as the popular 62mm package but with lower height, leading to: - reduced stray inductance - reduced parasitic resistance - higher ef?ciency at high frequency sp1 package: -replaces 2 sot-227 parts -improved assembly time and cost -height compatible with sot-227 -copper base plate d4 d3 27 sd1 sd2 twin tower 9-pin to-249 to-249 vj mini-mod mini-mod surface mount half pack sp3f sm3 sm2 sm1 sm5 sf1 sm4 sm2-1 sm3-1 sp2 sp6 17 m m sp3f package: -replaces up to 4 sot-227 parts -reduced assembly time and cost -height compatible with sot-227 -copper base plate 19 custom power modules microsemi pmp has created the application speci?c power module (aspm) concept and has been offering customized power modules si nce 1983. microsemi pmp offers a complete engineered solution with mix and match capabilities in term of package, con?guration, performance and cost. 3 levels of customization are proposed offering different cost and low volume entry: change options: die substrate base plate plastic lid terminals nre level moq elect./thermal performance die p/n material material - - none to low 5 to 10 pieces elect./thermal performance + electrical con?guration die p/n material & layout material - - low to medium elect./thermal performance + electrical con?guration + module housing die p/n material & layout material & shape material & shape shape medium to high microsemi pmp power modules are made of different sub-elements. most of them are standard and can be re-used to build in?nite s olutions for the end user. microsemi pmp offers optimum development cost and cycle time thanks to long term experience and wide range of available technol ogies. power modules features customer bene?ts high power density size and cost reduction isolated and highly thermally conductive substrate excellent thermal management internal wiring reduced external hardware minimum parasitics improved performance minimum output terminals reduced assembly time mix & match components optimizes losses full engineered solutions easy upgrade/less parts counts/ short time to market/ip protection great level of integration mix of silicon within the same package no quantity limitation application oriented standard and custom packages standard and custom terminals various substrate technologies coef?cient of thermal expansion matching flexibility technology packaging capability reliability applications solar - welding - plasma cutting - semicap - mri & xray - ev/hev - induction heating - ups - motor control - data communication internal printed circuit board not available in all modules. used to route gate signals tracks to small signal terminals used to mount gate circuit and protection in case of intelligent power module terminals screw on or solder pins provides the user with power and signal connections with minimum parasitic resistance and inductance substrates al2o3, aln, si3n4 provide isolation and good heat transfer to the base plate package standard or custom ensure environmental protection and mechanical robustness power semiconductor die igbt, mosfet, diode, sic, thyristor, switching devices soldered to the substrates and connected by ultrasonic al wire bonds base plate improve the heat transfer to the heat sink copper for good thermal transfer alsic, cuw, cumocu for improved reliability 20 rugged custom power modules microsemi pmp has acquired a great experience and know-how in module customization to address rugged and wide temperature range application and offers solution to meet with next generation integrated power systems expectation in terms of: s ) m p r o v e d 2 e l i a b i l i t y s 7 i d e r / p e r a t i n g 4 e m p a r a t u r e s s ( i g h e r 0 o w e r s ( i g h e r % f l c i e n c y s , o w e r 7 e i g h t a n d 3 i z e s , o w e r # o s t applications s ! v i o n i c s a c t u a t i o n s y s t e m s ! v i o n i c s l i f t a n d p u m p s - i l i t a r y g r o u n d v e h i c u l e s p o w e r s u p p l y a n d m o t o r c o n t r o l s . a v y s h i p a u x i l i a r y p o w e r s u p p l y s $ o w n h o l e d r i l l i n g test capabilities s 8 r a y s i n s p e c t i o n s $ i e l e c t r i c t e s t u p t o + 6 s % l e c t r i c a l t e s t i n g a t s p e c i l e d t e m p e r a t u r e s " u r n i n s ! c o u s t i c i m a g i n g reliability testing capabilities s 0 o w e r c y c l i n g s ( e r m e t i c s e a l i n g s - o i s t u r e s 3 a l t a t m o s p h e r e s ( 4 ' " s 4 e m p e r a t u r e s h o c k s ( ! 3 4 s ( 4 2 " s ! l t i t u d e s - e c h a n i c a l s h o c k v i b r a t i o n expertise capabilities s # r o s s s e c t i o n i n g s 3 t r u c t u r a l a n a l y s i s all tests can be conducted upon demand by sampling or at 100%. tests performed in house or with external lab. our core competencies s % x t e n s i v e e x p e r i e n c e o f r u g g e d s o l u t i o n s f o r harsh environments s 7 i d e r a n g e o f 3 i l i c o n t e c h n o l o g i e s s 7 a f e r f a b c a p a b i l i t i e s s - i x o f a s s e m b l y t e c h n o l o g i e s s ( e r m e t i c a n d r o b u s t p l a s t i c p a c k a g e s s # u s t o m t e s t b u r n i n s o l u t i o n s s ) 3 / c e r t i l e d s % n d o f l i f e o b s o l e s c e n c e m a n a g e m e n t s 4 h e r m a l m a n a g e m e n t s - a t e r i a l e x p e r t i s e s 0 r o d u c t l i f e m a n a g e m e n t a s s o c i a t e d t o r i s k s analysis industrial application extended temperature application harsh environment application standard module x no nre low volume entry modi?ed standard xx low nre low volume entry custom module xxx medium to high nre low volume entry various solutions are proposed offering different cost and low volume of entry: dice solder joint material cte thermal density (ppm/k) conductivity (g/cc) (w/m.k) base plate cuw 6.5 190 17 alsic 7 170 2.9 cu 17 390 8.9 substrate al 2 o 3 7 25 - aln 5 170 - si 3 n4 3 60 - die si 4 136 - sic 2.6 270 - cte thermal rthjc (ppm/k) conductivity (k/w) (w/m.k) silicon die (120 mm2) 4 136 cu/al 2 o 3 17/7 390/25 0.35 alsic/al 2 o 3 7/7 170/25 0.38 cu/aln 17/5 390/170 0.28 alsic/aln 7/5 170/170 0.31 alsic/si 3 n 4 7/3 170/60 0.31 dbc substrate solder joint base plate more closely matched materials tces increase the module life time because it will result in much less stress at the interface of the materials and inside the materials. the higher the thermal conductivity, the lower is the junction to case thermal resistance and the lower will be the delta of junction temperature of the device during operation such that the effect of power cycling on the dice will be minimized. another important feature is the material density particularly for the baseplate. taking copper as the reference, alsic has a density of 1/3 while cuw has twice the density. therefore alsic will provide substantial weight reduction at the same time as reliability increase. module performance and reliability depends on the choice of the assembly materials 21 power module part numbering system ii i iii iv vi v vii viii ii i iii iv v vi vii ii i iii iv vi v vii trade mark igbt type: gf = npt or npt fast gfq = npt ultra fast gl = trench 4 gt = trench 3 gv = mix npt/trench cv = mix trench/coolmos current : ic @ tc=80c topology: a = phase leg bb = boost buck da = boost chopper dda = double boost chopper dh = asymmetrical bridge dsk = double buck chopper du = dual common source h = full bridge hr = t-type 3-level sda = double boost + bypass diode sk = buck chopper ta = triple phase leg tdu = triple dual common source tl = three level u = single switch vda = interleaved pfc x = three phase bridge blocking voltage: 60 = 600v 120 = 1200v 170 = 1700v option: a = ain substrate c = sic diode d = series diode t = temperature sensor w = clamping parallel diode package: 1 = sp1 2 = sp2 3 = sp3 p = sp6-p d1 = d1 (34mm) d3 = d3 (62mm) d4 = d4 (62mm) g = rohs compliant trade mark mosfet type: mc = mosfet sic m = mosfet c = coolmos blocking voltage: 08 = 75v 80 = 800v 10 = 100v 90 = 900v 20 = 200v 100 = 100v 50 = 500v 120 = 120v 60 = 600v topology: a = phase leg bb = boost buck da = boost chopper dda = double boost chopper dh = asymmetrical bridge dsk = double buck chopper du = dual common source h = full bridge hr = t-type 3-level sda = double boost + bypass diode sk = buck chopper ta = triple phase leg tdu = triple dual common source tl = three level npc u = single switch vda = interleaved pfc rdson @ tc=25c 240 p? 24 p? m24 p? option: a = aln substrate c = sic diode d = series diode f = fredfet s = series and parallel diodes t = temperature sensor u = ultrafast fredfet package: 1 = sp1 2 = sp2 3 = sp3 p = sp6-p g = rohs compliant trade mark diode type: df = fred dr 6 w d q g d u g 5 h f w l h u dc = sic dsk = schottky current: if @ tc=80c topology: aa = dual common anode bb = boost buck ak = dual series kk = dual common cathode h = single phase bridge u = single switch x = three phase bridge blocking voltage: 20 = 200v 40 = 400v 60 = 600v 100 = 1000v 120 = 1200v 160 = 1600v 170 = 1700v package: 1 = sp1 3 = sp3 g = rohs compliant igbt modules mosfet modules diode modules i ii iii iv v vi vii viii i ii iii iv v vi vii viii i ii iii iv v vi vii apt gl 475 a 120 t d3 g apt c 60 da m24 t 1 g apt dr 90 x 160 1 g viii optional materials optional materials are available upon demand on most of the listed standard power modules. options are indicated with a letter in the suf?x of the module part number. temperature sensor option is indicated in the catalog with "yes" or "option" when available on standard part or on demand. a m t c n e ain substrate for higher thermal conductivity alsic base plate material for improved temperature cycling capabilities temperature sensor (ntc or ptc) for case temperature information sic diode for higher ef?ciency si3n4 substrate press ?t terminals (for sp3 package only) 22 all power modules rohs compliant igbt power modules sp2 continued next page sp6 sp1 sp4 sot-227 d3 d3 sp3 d1 v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc da... or ...u2 ...sk... or ...u3 a... 600 npt 250 2.1 d3 option aptgf250da60d3g aptgf250sk60d3g aptgf250a60d3g 330 2.1 d3 option aptgf330da60d3g aptgf330sk60d3g aptgf330a60d3g npt fast 30 2.1 sot227 - apt30gf60ju2 apt30gf60ju3 n/a 30 2.1 sp1 yes n/a n/a aptgf30a60t1g 50 2.1 sot227 - apt50gf60ju2 apt50gf60ju3 n/a 60 2.1 sot227 - apt60gf60ju2 apt60gf60ju3 n/a 90 2.1 sp1 yes aptgf90da60t1g aptgf90sk60t1g aptgf90a60t1g 100 2.1 sot227 - apt100gf60ju2 apt100gf60ju3 n/a 150 2.1 sp3 yes n/a n/a aptgf150a60t3ag 165 2.1 d1 - aptgf165da60d1g aptgf165sk60d1g aptgf165a60d1g 180 2.1 sp4 yes aptgf180da60tg aptgf180sk60tg aptgf180a60tg 350 2.1 sp6 option aptgf350da60g aptgf350sk60g aptgf350a60g trench3 75 1.5 sp1 yes aptgt75da60t1g aptgt75sk60t1g aptgt75a60t1g 100 1.5 sp1 yes aptgt100da60t1g aptgt100sk60t1g aptgt100a60t1g 100 1.5 sp2 - n/a n/a aptgt100a602g 150 1.5 sp1 yes aptgt150da60t1g aptgt150sk60t1g aptgt150a60t1g 150 1.5 sp3 yes n/a n/a aptgt150a60t3ag 200 1.5 sp2 - n/a n/a aptgt200a602g 200 1.5 sp3 yes aptgt200da60t3ag aptgt200sk60t3ag aptgt200a60t3ag 300 1.5 sp4 yes n/a n/a aptgt300a60tg 300 1.5 sp6 option aptgt300da60g aptgt300sk60g aptgt300a60g 300 1.5 d3 option aptgt300da60d3g aptgt300sk60d3g aptgt300a60d3g 400 1.5 d3 option aptgt400da60d3g aptgt400sk60d3g aptgt400a60d3g 450 1.5 sp6 option aptgt450da60g aptgt450sk60g aptgt450a60g 600 1.5 sp6 option aptgt600da60g aptgt600sk60g aptgt600a60g 650 trench 4 fast 100 1.85 sp1 yes n/a n/a aptglq100a65t1g 600 1.85 sp6 yes n/a n/a aptglq600a65t6g 1200 npt fast 15 3.2 sp1 yes n/a n/a aptgf15a120t1g 50 3.2 sp1 yes aptgf50da120t1g aptgf50sk120t1g aptgf50a120t1g 75 3.2 sp1 yes aptgf75da120t1g n/a n/a 100 3.2 sp1 yes aptgf100da120t1g n/a n/a 100 3.2 sp2 - n/a n/a aptgf100a1202g 100 3.2 sp3 yes n/a n/a aptgf100a120t3ag 100 3.2 sp4 yes aptgf100da120tg aptgf100sk120tg aptgf100a120tg 150 3.2 sp3 yes n/a n/a aptgf150a120t3ag 150 3.2 sp4 yes aptgf150da120tg aptgf150sk120tg aptgf150a120tg 200 3.2 d3 option n/a n/a aptgf200a120d3g 300 3.2 sp6 option aptgf300da120g aptgf300sk120g aptgf300a120g 300 3.2 d3 option aptgf300da120d3g aptgf300sk120d3g aptgf300a120d3g trench 3 35 1.7 sp1 yes n/a n/a aptgt35a120t1g 35 1.7 sot227 - apt35gt120ju2 apt35gt120ju3 n/a 50 1.7 sot227 - apt50gt120ju2 apt50gt120ju3 n/a 50 1.7 sp1 yes n/a n/a aptgt50a120t1g 50 1.7 sp2 - n/a n/a aptgt50a1202g 50 1.7 sp4 yes aptgt50da120tg aptgt50sk120tg n/a 75 1.7 sot227 - apt75gt120ju2 apt75gt120ju3 n/a 75 1.7 sp1 yes n/a n/a aptgt75a120t1g chopper and phase leg new! new! s p 4 sp6 23 all power modules rohs compliant sp6 sp1 sp4 sot-227 d3 d3 sp3 igbt power modules d1 v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc da... or ...u2 ...sk... or ...u3 a... 1200 trench 3 75 1.7 sp2 - n/a n/a aptgt75a1202g 75 1.7 sp4 yes aptgt75da120tg aptgt75sk120tg n/a 100 1.7 sp1 yes aptgt100da120t1g n/a n/a 100 1.7 sot227 - apt100gt120ju2 apt100gt120ju3 n/a 100 1.7 d1 - n/a n/a aptgt100a120d1g 100 1.7 sp2 - n/a n/a aptgt100a1202g 100 1.7 sp3 yes n/a n/a aptgt100a120t3ag 100 1.7 sp4 yes n/a n/a aptgt100a120tg 150 1.7 sp6 option aptgt150da120g aptgt150sk120g aptgt150a120g 150 1.7 d1 - aptgt150da120d1g aptgt150sk120d1g aptgt150a120d1g 150 1.7 sp2 - n/a n/a aptgt150a1202g 150 1.7 sp3 yes n/a n/a aptgt150a120t3ag 150 1.7 sp4 yes n/a n/a aptgt150a120tg 200 1.7 sp6 option aptgt200da120g aptgt200sk120g aptgt200a120g 200 1.7 d3 option aptgt200da120d3g aptgt200sk120d3g aptgt200a120d3g 300 1.7 sp6 option aptgt300da120g aptgt300sk120g aptgt300a120g 300 1.7 d3 option aptgt300da120d3g aptgt300sk120d3g aptgt300a120d3g 400 1.7 sp6 option aptgt400da120g aptgt400sk120g aptgt400a120g 400 1.7 d3 option n/a n/a aptgt400a120d3g trench 4 40 1.85 sot227 - apt40gl120ju2 apt40gl120ju3 n/a 90 1.85 sp1 yes aptgl90da120t1g aptgl90sk120t1g aptgl90a120t1g 180 1.85 sp2 - n/a n/a aptgl180a1202g 180 1.85 sp3 yes n/a n/a aptgl180a120t3ag 325 1.85 d3 option aptgl325da120d3g aptgl325sk120d3g aptgl325a120d3g 475 1.85 d3 option aptgl475da120d3g aptgl475sk120d3g aptgl475a120d3g 700 1.85 d3 option aptgl700da120d3g aptgl700sk120d3g n/a trench 4 fast 100 2.05 sp3 yes n/a n/a aptglq100a120t3ag 400 2.05 sp6 yes n/a n/a aptglq400a120t6g 1700 trench 3 30 2.0 sp1 yes aptgt30da170t1g aptgt30sk170t1g aptgt30a170t1g 50 2.0 sp1 yes aptgt50da170t1g aptgt50sk170t1g aptgt50a170t1g 50 2.0 sp4 yes aptgt50da170tg aptgt50sk170tg aptgt50a170tg 75 2.0 sp1 yes aptgt75da170t1g n/a n/a 75 2.0 d1 - aptgt75da170d1g aptgt75sk170d1g aptgt75a170d1g 100 2.0 sp4 yes aptgt100da170tg aptgt100sk170tg aptgt100a170tg 150 2.0 sp6 option aptgt150da170g aptgt150sk170g aptgt150a170g 200 2.0 d3 option aptgt200da170d3g aptgt200sk170d3g aptgt200a170d3g 225 2.0 sp6 option aptgt225da170g aptgt225sk170g aptgt225a170g 300 2.0 sp6 option aptgt300da170g aptgt300sk170g aptgt300a170g 300 2.0 d3 option aptgt300da170d3g aptgt300sk170d3g aptgt300a170d3g chopper and phase leg cont. new! new! v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 npt fast 30 2.1 sp3 yes aptgf30x60t3g 50 2.1 sp3 yes aptgf50x60t3g trench 3 30 1.5 sp3 yes aptgt30x60t3g 50 1.5 sp3 yes aptgt50x60t3g 75 1.5 sp3 yes aptgt75x60t3g 1200 npt fast 15 3.2 sp3 yes aptgf15x120t3g 25 3.2 sp3 yes aptgf25x120t3g trench 3 25 1.7 sp3 yes aptgt25x120t3g 35 1.7 sp3 yes aptgt35x120t3g trench 4 40 1.85 sp3 yes aptgl40x120t3g 3 phase bridge sp6 s p 4 24 all power modules rohs compliant sp4 sp3 igbt power modules sp6-p v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 1200 npt fast 100 3.2 sp3 yes aptgf100a120t3wg 150 3.2 sp3 yes aptgf150a120t3wg phase leg for welding application v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 npt fast 90 2.1 sp6-p option aptgf90ta60pg trench 3 50 1.5 sp6-p option aptgt50ta60pg 75 1.5 sp6-p option aptgt75ta60pg 150 1.5 sp6-p option aptgt150ta60pg 1200 npt fast 50 3.2 sp6-p option aptgf50ta120pg trench 3 75 1.7 sp6-p option aptgt75ta120pg 100 1.7 sp6-p yes aptgt100ta120tpg trench 4 120 1.85 sp6-p yes aptgl120ta120tpg triple phase leg v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 trench 3 50 1.5 sp6-p option aptgt50tdu60pg 75 1.5 sp6-p option aptgt75tdu60pg 100 1.5 sp6-p option aptgt100tdu60pg 150 1.5 sp6-p option aptgt150tdu60pg 1200 npt fast 50 3.2 sp6-p option aptgf50tdu120pg trench 3 75 1.7 sp6-p option aptgt75tdu120pg trench 4 120 1.85 sp6-p yes aptgl120tdu120tpg 1700 trench 3 50 2.0 sp6-p option aptgt50tdu170pg triple dual common source v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 npt fast 50 2.1 sp3 yes aptgf50vda60t3g 1200 50 3.2 sp3 yes aptgf50vda120t3g interleaved pfc v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc ...dda... ...dsk... 600 npt fast 50 2.1 sp3 yes aptgf50dda60t3g aptgf50dsk60t3g trench 3 50 1.5 sp3 yes aptgt50dda60t3g aptgt50dsk60t3g 75 1.5 sp3 yes aptgt75dda60t3g aptgt75dsk60t3g 1200 npt fast 25 3.2 sp3 yes aptgf25dda120t3g aptgf25dsk120t3g 50 3.2 sp3 yes aptgf50dda120t3g aptgf50dsk120t3g 75 3.2 sp4 yes aptgf75dda120tg aptgf75dsk120tg trench 3 50 1.7 sp3 yes aptgt50dda120t3g aptgt50dsk120t3g trench 4 60 1.85 sp3 yes aptgl60dda120t3g aptgl60dsk120t3g 90 1.85 sp3 yes aptgl90dda120t3g aptgl90dsk120t3g dual chopper sp 6 p s p 4 4 25 new! new! new! all power modules rohs compliant sp3 sp1 igbt power modules sp6 full bridge sp4 sp2 v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc ...h... ...dh... 600 npt fast 30 2.1 sp1 yes aptgf30h60t1g n/a 30 2.1 sp3 yes aptgf30h60t3g n/a 50 2.1 sp1 yes aptgf50h60t1g aptgf50dh60t1g 50 2.1 sp2 yes aptgf50h60t2g n/a 50 2.1 sp3 yes aptgf50h60t3g n/a 90 2.1 sp3 yes aptgf90h60t3g aptgf90dh60t3g 180 2.1 sp6 - aptgf180h60g aptgf180dh60g trench 3 20 1.5 sp1 yes aptgt20h60t1g n/a 30 1.5 sp1 yes aptgt30h60t1g n/a 50 1.5 sp1 yes aptgt50h60t1g aptgt50dh60t1g 50 1.5 sp2 yes aptgt50h60t2g n/a 50 1.5 sp3 yes aptgt50h60t3g n/a 75 1.5 sp1 yes aptgt75h60t1g aptgt75dh60t1g 75 1.5 sp2 yes aptgt75h60t2g n/a 75 1.5 sp3 yes aptgt75h60t3g n/a 100 1.5 sp4 yes aptgt100h60tg aptgt100dh60tg 100 1.5 sp3 yes aptgt100h60t3g aptgt100dh60t3g 150 1.5 sp4 yes aptgt150h60tg aptgt150dh60tg 200 1.5 sp6 - aptgt200h60g aptgt200dh60g 300 1.5 sp6 - aptgt300h60g aptgt300dh60g 650 trench 4 fast 75 1.85 sp1 yes aptglq75h65t1g n/a 300 1.85 sp6 option aptglq300h65g n/a 1200 npt ultra fast 25 2.1 sp2 yes aptgfq25h120t2g n/a npt fast 15 3.2 sp1 yes aptgf15h120t1g n/a 25 3.2 sp1 yes aptgf25h120t1g n/a 25 2.1 sp2 yes aptgf25h120t2g n/a 25 3.2 sp3 yes aptgf25h120t3g n/a 50 3.2 sp3 yes n/a aptgf50dh120t3g 50 3.2 sp4 yes aptgf50h120tg aptgf50dh120tg 75 3.2 sp4 yes aptgf75h120tg aptgf75dh120tg 150 3.2 sp6 - aptgf150h120g aptgf150dh120g trench 3 35 1.7 sp3 yes aptgt35h120t3g n/a 50 1.7 sp3 yes n/a aptgt50dh120t3g 50 1.7 sp4 yes aptgt50h120tg aptgt50dh120tg 50 1.7 sp3 yes aptgt50h120t3g n/a 75 1.7 sp3 yes n/a aptgt75dh120t3g 75 1.7 sp4 yes aptgt75h120tg aptgt75dh120tg 100 1.7 sp4 yes n/a aptgt100dh120tg 100 1.7 sp6 - aptgt100h120g n/a 150 1.7 sp6 - aptgt150h120g aptgt150dh120g 200 1.7 sp6 - aptgt200h120g aptgt200dh120g trench 4 40 1.85 sp1 yes aptgl40h120t1g n/a 60 1.85 sp3 yes aptgl60h120t3g aptgl60dh120t3g 90 1.85 sp3 yes aptgl90h120t3g aptgl90dh120t3g trench 4 fast 40 2.05 sp1 yes aptglq40h120t1g n/a 75 2.05 sp3 yes aptglq75h120t3g n/a 200 2.05 sp6 option aptglq200h120g n/a 1700 trench 3 30 2.0 sp3 yes aptgt30h170t3g n/a 50 2.0 sp4 yes aptgt50h170tg aptgt50dh170tg 100 2.0 sp6 - aptgt100h170g aptgt100dh170g 150 2.0 sp6 - aptgt150h170g aptgt150dh170g full & asymmetrical bridge new! new! s p 4 n ew! n ew! n ew! 26 sp4 sp6 d4 igbt power modules v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 npt fast 360 2.1 d4 - aptgf360u60d4g 500 2.1 d4 - aptgf500u60d4g 660 2.1 d4 - aptgf660u60d4g trench 3 750 1.5 d4 - aptgt750u60d4g 1200 npt fast 530 3.2 d4 - aptgf530u120d4g trench 3 400 1.7 d4 - aptgt400u120d4g 600 1.7 d4 - aptgt600u120d4g trench 4 475 1.85 d4 - aptgl475u120d4g 700 1.85 d4 - aptgl700u120d4g 1700 trench 3 400 2.0 d4 - aptgt400u170d4g 600 2.0 d4 - aptgt600u170d4g single switch v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 1200 npt fast 200 3.2 sp6 - aptgf200u120dg 300 3.2 sp6 - aptgf300u120dg trench 4 475 1.85 sp6 - aptgl475u120dag single switch + series diode v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 npt fast 90 2.1 sp4 yes aptgf90du60tg 180 2.1 sp4 yes aptgf180du60tg 350 2.1 sp6 - aptgf350du60g trench 3 100 1.5 sp4 yes aptgt100du60tg 200 1.5 sp4 yes aptgt200du60tg 300 1.4 sp6 - aptgt300du60g 600 1.4 sp6 - aptgt600du60g 1200 npt fast 100 3.2 sp4 yes aptgf100du120tg 150 3.2 sp4 yes aptgf150du120tg 300 3.2 sp6 - aptgf300du120g trench 3 50 1.7 sp4 yes aptgt50du120tg 75 1.7 sp4 yes aptgt75du120tg 100 1.7 sp4 yes aptgt100du120tg 150 1.7 sp6 - aptgt150du120g 150 1.7 sp4 yes aptgt150du120tg 200 1.7 sp6 - aptgt200du120g 300 1.7 sp6 - aptgt300du120g 400 1.7 sp6 - aptgt400du120g 1700 trench 3 100 2.0 sp4 yes aptgt100du170tg 225 2.0 sp6 - aptgt225du170g 300 2.0 sp6 - aptgt300du170g dual common source v ces (v) igbt type i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 npt fast 350 2.1 lp8 - aptlgf350a608g trench 3 400 1.5 lp8 - aptlgt400a608g 1200 npt fast 300 3.2 lp8 - aptlgf300a1208g trench 3 300 1.7 lp8 - aptlgt300a1208g trench 4 325 1.8 lp8 - aptlgl325a1208g phase leg intelligent power modules lp8 sp 6 s p 4 27 all power modules rohs compliant sp1 sp6 sp4 sot-227 mosfet power modules coolmos tm is a trademark of in?neon technologies ag. v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc da...or...u2 sk...or...u3 100 mos 5 11 100 sot-227 - apt10m11jvru2 apt10m11jvru3 4.5 207 sp4 yes aptm10dam05tg aptm10skm05tg 2.25 370 sp6 - aptm10dam02g aptm10skm02g 200 mos 5 22 71 sot-227 - apt20m22jvru2 apt20m22jvru3 mos 7 8 147 sp4 yes aptm20dam08tg aptm20skm08tg 5 250 sp6 option aptm20dam05g aptm20skm05g 4 300 sp6 option aptm20dam04g aptm20skm04g 500 mos 5 100 30 sot-227 - apt5010jvru2 apt5010jvru3 mos 7 100 30 sot-227 - apt5010jllu2 apt5010jllu3 75 32 sot-227 - apt50m75jllu2 apt50m75jllu3 19 125 sp6 option aptm50dam19g aptm50skm19g 17 140 sp6 option aptm50dam17g aptm50skm17g mos 8 65 43 sot-227 - apt58m50ju2 apt58m50ju3 600 coolmos 70 40 sot-227 - apt40n60jcu2 apt40n60jcu3 24 70 sp1 yes aptc60dam24t1g aptc60skm24t1g 900 coolmos 120 25 sot-227 - apt33n90jcu2 apt33n90jcu3 60 44 sp1 yes aptc90dam60t1g aptc90skm60t1g 1000 mos 7 180 33 sp4 yes aptm100da18tg aptm100sk18tg 90 59 sp6 option aptm100dam90g aptm100skm90g mos 8 330 17 sp1 yes aptm100da33t1g aptm100sk33t1g 1200 mos 8 560 13 sp1 yes aptm120da56t1g aptm120sk56t1g 300 23 sp1 yes aptm120da30t1g n/a chopper v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc ...dda... ...dsk... 100 mos 5 19 50 sp3 yes aptm10ddam19t3g aptm10dskm19t3g 9 100 sp3 yes aptm10ddam09t3g aptm10dskm09t3g 500 mos 7 100 24 sp3 yes aptm50dda10t3g aptm50dsk10t3g 65 37 sp3 yes aptm50ddam65t3g aptm50dskm65t3g 600 coolmos 45 38 sp1 yes aptc60ddam45t1g aptc60dskm45t1g 70 29 sp1 yes aptc60ddam70t1g aptc60dskm70t1g 35 54 sp3 yes aptc60ddam35t3g aptc60dskm35t3g 24 70 sp3 yes aptc60ddam24t3g aptc60dskm24t3g 800 coolmos 150 21 sp3 yes aptc80dda15t3g aptc80dsk15t3g 900 coolmos 120 23 sp1 yes aptc90dda12t1g aptc90dsk12t1g 1000 mos 7 350 17 sp3 yes aptm100dda35t3g aptm100dsk35t3g 1200 mos 7 570 13 sp3 yes aptm120dda57t3g aptm120dsk57t3g dual chopper s p 4 s p 6 6 sp3 28 all power modules rohs compliant sp1 mosfet power modules sp3 sp4 sp6 sp2 coolmos tm is a trademark of in?neon technologies ag. v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 100 fredfet 5 4.5 207 sp6 - aptm10hm05fg 19 50 sp3 yes aptm10hm19ft3g 9 100 sp3 yes aptm10hm09ft3g 200 fredfet 7 20 62 sp4 yes aptm20hm20ftg 16 74 sp4 yes aptm20hm16ftg 10 125 sp6 - aptm20hm10fg 8 147 sp6 - aptm20hm08fg 500 fredfet 7 140 18 sp3 yes aptm50h14ft3g 100 24 sp3 yes aptm50h10ft3g 75 32 sp4 yes aptm50hm75ftg 75 32 sp3 yes aptm50hm75ft3g 65 37 sp4 yes aptm50hm65ftg 65 37 sp3 yes aptm50hm65ft3g 38 64 sp6 - aptm50hm38fg 35 70 sp6 - aptm50hm35fg fredfet 8 150 19 sp1 yes aptm50h15ft1g 600 coolmos 70 29 sp1 yes aptc60hm70t1g 45 38 sp1 yes aptc60hm45t1g 83 21 sp2 yes aptc60hm83ft2g 70 29 sp3 yes aptc60hm70t3g 35 54 sp3 yes aptc60hm35t3g 24 70 sp3 yes aptc60hm24t3g fredfet 8 230 15 sp1 yes aptm60h23ft1g 800 coolmos 150 21 sp1 yes aptc80h15t1g 290 11 sp3 yes aptc80h29t3g 150 21 sp3 yes aptc80h15t3g 900 coolmos 120 23 sp1 yes aptc90h12t1g 120 23 sp2 yes aptc90h12t2g 60 44 sp3 yes aptc90hm60t3g 1000 fredfet 7 450 14 sp3 yes aptm100h45ft3g 350 17 sp4 yes aptm100h35ftg 350 17 sp3 yes aptm100h35ft3g 180 33 sp6 - aptm100h18fg fredfet 8 460 14 sp3 yes aptm100h46ft3g 1200 fredfet 7 290 25 sp6 - aptm120h29fg fredfet 8 1400 6 sp1 yes aptm120h140ft1g full bridge v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 200 mos 7 20 62 sp4 yes aptm20hm20stg 500 mos 7 75 32 sp4 yes aptm50hm75stg 1000 mos 7 450 13 sp4 yes aptm100h45stg full bridge + series and parallel diodes v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 100 mos 5 9 100 sp3 yes aptm10dhm09t3g 4.5 207 sp6 - aptm10dhm05g 200 mos 7 16 77 sp3 yes aptm20dhm16t3g 8 147 sp6 - aptm20dhm08g 500 mos 7 38 64 sp6 - aptm50dhm38g 35 70 sp6 - aptm50dhm35g mos 8 65 32 sp3 yes aptm50dhm65t3g 600 coolmos 24 70 sp3 yes aptc60dhm24t3g asymmetrical bridge s p 6 6 s p 4 4 29 all power modules rohs compliant sp6-p sp4 sp6 mosfet power modules sp1 sp2 coolmos tm is a trademark of in?neon technologies ag. v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 100 fredfet 5 4.5 207 sp4 yes aptm10am05ftg 2.25 370 sp6 option aptm10am02fg 200 fredfet 7 10 125 sp4 yes aptm20am10ftg 8 147 sp4 yes aptm20am08ftg 5 250 sp6 option aptm20am05fg 4 300 sp6 option aptm20am04fg 500 fredfet 7 38 64 sp4 yes aptm50am38ftg 35 70 sp4 yes aptm50am35ftg 19 125 sp6 option aptm50am19fg 17 140 sp6 option aptm50am17fg 600 coolmos 45 38 sp1 yes aptc60am45t1g 42 40 sp2 - aptc60am42f2g 35 54 sp1 yes aptc60am35t1g 24 70 sp1 yes aptc60am24t1g 24 70 sp2 - aptc60am242g fredfet 8 110 30 sp1 yes aptm60a11ft1g 900 coolmos 60 44 sp1 yes aptc90am60t1g 60 44 sp2 - aptc90am602g 1000 fredfet 7 180 33 sp4 yes aptm100a18ftg 90 59 sp6 option aptm100am90fg fredfet 8 400 16 sp1 yes aptm100a40ft1g 1200 fredfet 7 290 25 sp4 yes aptm120a29ftg 150 45 sp6 option aptm120a15fg fredfet 8 650 12 sp1 yes aptm120a65ft1g phase leg v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 200 mos 7 10 125 sp4 yes aptm20am10stg 6 225 sp6 - aptm20am06sg 500 mos 7 38 64 sp4 yes aptm50am38stg 24 110 sp6 - aptm50am24sg 1000 mos 7 230 26 sp4 yes aptm100a23stg 130 49 sp6 - aptm100a13sg 1200 mos 7 200 37 sp6 - aptm120a20sg phase leg + series and parallel diodes v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 1000 mos 7 130 49 sp6 - aptm100a13dg 1200 mos 7 200 37 sp6 - aptm120a20dg phase leg + series diodes v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 75 mosfet 4.2 90 sp6-p option aptm08tam04pg 100 fredfet 5 19 50 sp6-p option aptm10tam19fpg 9 100 sp6-p option aptm10tam09fpg 200 fredfet 7 16 74 sp6-p option aptm20tam16fpg 500 fredfet 7 65 37 sp6-p option aptm50tam65fpg 600 coolmos 35 54 sp6-p option aptc60tam35pg 24 70 sp6-p yes aptc60tam24tpg 800 coolmos 150 21 sp6-p option aptc80ta15pg 900 coolmos 60 44 sp6-p yes aptc90tam60tpg 1000 fredfet 7 350 17 sp6-p option aptm100ta35fpg triple phase leg sp6 - p sp 4 sp 6 30 all power modules rohs compliant sp6-p sp4 sp6 sp1 sp3 mosfet power modules coolmos tm is a trademark of in?neon technologies ag. v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 100 mos 5 9 100 sp6-p option aptm10tdum09pg 600 coolmos 35 54 sp6-p option aptc60tdum35pg 800 coolmos 150 21 sp6-p option aptc80tdu15pg 1200 mos 7 570 13 sp6-p option aptm120tdu57pg triple dual common source v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 100 mos 5 2.25 370 sp6 - aptm10dum02g 200 mos 7 8 147 sp4 yes aptm20dum08tg 5 250 sp6 - aptm20dum05g 4 300 sp6 - aptm20dum04g 500 mos 7 35 70 sp4 yes aptm50dum35tg 17 140 sp6 - aptm50dum17g 1000 mos 7 90 59 sp6 - aptm100dum90g 1200 mos 7 150 45 sp6 - aptm120du15g dual common source v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 100 fredfet 5 2.25 430 sp6 option aptm10um02fag 1.5 640 sp6 option aptm10um01fag 200 fredfet 7 3 434 sp6 option aptm20um03fag 500 fredfet 7 9 371 sp6 option aptm50um09fag 1000 fredfet 7 60 97 sp6 option aptm100um60fag 45 160 sp6 option aptm100um45fag 1200 fredfet 7 70 126 sp6 option aptm120um70fag single switch v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 1000 mos 7 65 110 sp6 - aptm100um65dag 45 160 sp6 - aptm100um45dag 1200 mos 7 70 126 sp6 - aptm120um70dag single switch + series diode v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 200 mos 7 4 310 sp6 option aptm20um04sag 500 mos 7 13 250 sp6 option aptm50um13sag 1000 mos 7 65 110 sp6 option aptm100um65sag 1200 mos 7 100 86 sp6 option aptm120u10sag single switch + series and parallel diodes v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 600 coolmos 45 38 sp1 yes aptc60vdam45t1g 24 70 sp3 yes aptc60vdam24t3g 1000 mos 7 350 17 sp3 yes aptm100vda35t3g 1200 570 13 sp3 yes aptm120vda57t3g interleaved pfc sp6 - p sp6 s p4 31 coolmos or fast igbt sp1 sp3 sp4 sp6-p renewable energy power modules mosfet power modules sp3f fast igbt coolmos tm is a trademark of in?neon technologies ag. v dss (v) mosfet type r ds (on) (m 1 ) shunt resistor (mr) package ntc 100 mos 5 9 4.4 sp1 or sp3 yes aptml10um09r004t1ag aptml102um09r004t3ag 200 18 10 yes aptml20um18r010t1ag aptml202um18r010t3ag 500 mosfet linear 90 20 yes aptml50um90r020t1ag aptml502um90r020t3ag 600 125 20 yes aptml60u12r020t1ag aptml602u12r020t3ag 1000 mos 4 linear 600 20 yes aptml100u60r020t1ag aptml1002u60r020t3ag single and dual linear mosfet v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 mix trench igbt & npt igbt 50 2.1/1.5 sp3 yes aptgv50h60t3g 75 2.1/1.5 sp3 yes aptgv75h60t3g 100 2.1/1.5 sp3 yes aptgv100h60t3g mix trench igbt & coolmos 50 83mr/1.5 sp1 yes aptcv40h60ct1g 50 45mr/1.5 sp3 yes aptcv50h60t3g 1200 mix trench igbt & npt igbt 25 3.2/1.7 sp3 yes aptgv25h120t3g 50 3.2/1.7 sp3 yes aptgv50h120t3g full bridge v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc special part number 600 mix trench igbt & coolmos 38 1.5/45mr sp3f yes 20a pfc sic diode aptcv60hm45bc20t3g 38 1.5/45mr sp3f yes - aptcv60hm45bt3g 29 1.5/70mr sp3f yes - aptcv60hm70bt3g coolmos 29 70mr sp3f yes - aptc60hm70bt3g mix trench igbt & npt igbt 50 3.2/1.7 sp3f yes - aptgv50h60bt3g pfc + bypass diode + full bridge v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc special part number 600 mix trench igbt & coolmos 38 1.5/45mr sp3f yes 20a sic antiparallel diode aptcv60hm45rct3g 38 1.5/45mr sp3f yes - aptcv60hm45rt3g 29 1.5/70mr sp3f yes - aptcv60hm70rt3g coolmos 29 70mr sp3f yes - aptc60hm70rt3g trench 3 50 1.5 sp3f yes - aptgt50h60rt3g secondary fast rectifier + full bridge v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc special part number 600 coolmos 38 45mr sp1 n/a 10a pfc sic diode aptc60am45bc1g 38 45mr sp1 n/a - aptc60am45b1g 27 83mr sp1 n/a 10a pfc sic diode aptc60am83bc1g 27 83mr sp1 n/a - aptc60am83b1g pfc + bypass diode + phase leg v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 mix trench igbt & npt igbt 50 2.1/1.5 sp4 - aptgv50h60bg 100 2.1/1.5 sp6-p yes aptgv100h60btpg 1200 mix trench igbt & npt igbt 25 3.2/1.7 sp4 - aptgv25h120bg 50 3.2/1.7 sp6-p yes aptgv50h120btpg pfc + full bridge sp 4 4 sp3f sp 6 6 p p ptn b 32 new! new! new! renewable energy power modules sp1 sp3 sp3f sp1 sp3 coolmos tm is a trademark of in?neon technologies ag. v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 coolmos 70 24mr sp3f yes aptc60bbm24t3g 600 trench 3 100 1.5 sp3f yes aptgt100bb60t3g boost buck v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 trench 3 20 1.5 sp1 - aptgt20tl601g 30 1.5 sp3 yes aptgt30tl60t3g 30 1.5 sp1 - aptgt30tl601g 50 1.5 sp3 yes aptgt50tl60t3g 50 1.5 sp1 - aptgt50tl601g 75 1.5 sp3 yes aptgt75tl60t3g 100 1.5 sp3 yes aptgt100tl60t3g 150 1.5 sp6 - aptgt150tl60g 200 1.5 sp6 - aptgt200tl60g 300 1.5 sp6 - aptgt300tl60g npt fast 30 2.1 sp1 - aptgf30tl601g 50 2.1 sp3 yes aptgf50tl60t3g 1200 trench 4 60 1.85 sp3 yes aptgl60tl120t3g 240 1.8 sp6 - aptgl240tl120g 1700 trench 3 100 2.0 sp6 - aptgt100tl170g 3-level npc inverter v ces (v) technology r ds (on) coolmos (m 1 ) v ce (on) igbt (v) / i c (a) package ntc part number 600 mix trench igbt & coolmos 24 1.5/75 sp3 yes aptcv60tlm24t3g 45 1.5/75 sp3 yes aptcv60tlm45t3g 70 1.5/50 sp3 yes aptcv60tlm70t3g 99 1.5/30 sp3 yes aptcv60tlm99t3g 900 mix trench igbt & coolmos 120 1.85/50 sp3 yes aptcv90tl12t3g v ces (v) technology i c (a) t c =80o c v ce (on) (v) at rated ic package ntc special part number 600/1200 trench 4 fast 40 2.05 sp3f yes 10a/600v sic aptglq40hr120ct3g 80 2.05 sp3f yes 30a/600v sic aptglq80hr120ct3g 200 2.05 sp6 no - aptglq200hr120g t-type 3-level inverter b e r 24 t3g 45 t 3g 70 70 7 7 7 7 7 7 t 3g sp6 3-level 33 new! new! new! all power modules rohs compliant sot-227 sp1 operating frequency vs drain current 0 100 200 300 400 10 20 30 40 50 60 drain current (a) frequency (khz) diode power modules with sic diodes igbt power modules with sic diodes sic diode si diode silicone carbide (sic) schottky diodes offer superior dynamic and thermal performance over conventional silicon power diodes. the main advantages of the sic schottky diodes are: ? ( v v h q w l d o o \ ] h u r i r u z d u g d q g u h y h u v h u h f r y h u \ reduced switch and diode switching losses ? 7 h p s h u d w x u h l q g h s h q g h q w v z l w f k l q j e h k d y l r u v w d e o h high temperature performance ? 3 r v l w l y h w h p s h u d w x u h f r h i f l h q w r i 9 ) h d v h r i parallel operation ? 8 v d e o h ? & - x q f w l r q 7 h p s h u d w x u h v d i h o \ r s h u d w h at higher temperatures extremely fast switching of sic schottky diode enables designs with: ? , p s u r y h g 6 \ v w h p ( i f l h q f \ ? + l j k h u 5 h o l d e l o l w \ ? / r z h u 6 \ v w h p 6 z l w f k l q j / r v v h v ? / r z h u 6 \ v w h p & r v w smaller emi filter smaller magnetic components smaller heat-sink smaller switches, eliminate snubbers ? 5 h g x f h g 6 \ v w h p 6 l ] h fewer / smaller components applications: ? 3 ) & ? 2 x w s x w 5 h f w l f d w l r q ? 6 r o d u , q y h u w h u ? 0 r w r u & r q w u r o ? 6 q x e e h u ' l r g h v rrm (v) diode type if (a) t c =100o c vf (v) t j =25o c package anti-parallel parallel 600 sic 20 1.6 sot-227 apt2x20dc60j apt2x21dc60j 30 1.6 sot-227 apt2x30dc60j apt2x31dc60j 40 1.6 sot-227 apt2x40dc60j apt2x41dc60j 50 1.6 sot-227 apt2x50dc60j apt2x51dc60j 60 1.6 sot-227 apt2x60dc60j apt2x61dc60j 90 1.6 sp1 - aptdc902u601g 1200 sic 20 1.6 sot-227 apt2x20dc120j apt2x21dc120j 30 1.6 sot-227 apt2x30dc120j apt2x31dc120j 40 1.6 sot-227 apt2x40dc120j apt2x41dc120j 50 1.6 sot-227 apt2x50dc120j apt2x51dc120j 60 1.6 sot-227 apt2x60dc120j apt2x61dc120j dual diode v rrm (v) diode type if (a) t c =100o c vf (v) t j =25o c package part number 600 sic 6 1.6 sot-227 apt06dc60hj 10 1.6 sp1 aptdc10h601g 20 1.6 sp1 aptdc20h601g 40 1.6 sp1 aptdc40h601g 40 1.6 sot-227 apt40dc60hj 1200 sic 10 1.6 sot-227 apt10dc120hj 20 1.6 sp1 aptdc20h1201g 20 1.6 sot-227 apt20dc120hj 40 1.6 sp1 aptdc40h1201g 40 1.6 sot-227 apt40dc120hj full bridge v rrm (v) igbt type ic (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 600 npt 50 2.1 sot-227 - apt50gf60jcu2 90 2.1 sp1 yes aptgf90da60ct1g 1200 npt 15 3.2 sot-227 - apt15gf120jcu2 25 3.2 sot-227 - apt25gf120jcu2 50 3.2 sp1 yes aptgf50da120ct1g trench 4 fast 25 2.05 sot-227 - apt25glq120jcu2 40 2.05 sot-227 - apt40glq120jcu2 boost chopper v rrm (v) igbt type ic (a) t c =80o c v ce (on) (v) at rated ic package ntc part number 1200 trench 4 fast 40 2.05 sp3f yes aptglq40dda120ct3g dual chopper power modules with sic schottky diodes sp3f 34 new! new! sot-227 sp1 sp6 sp4 power modules with sic schottky diodes mosfets & coolmos tm power modules with sic diodes coolmos tm is a trademark of in?neon technologies ag. v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 1000 mos7 65 110 sp6 option aptm100um65scavg 1200 mos7 100 86 sp6 option aptm120u10scavg single switch + series fred and sic parallel diodes v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 500 mos 7 75 34 sp4 yes aptm50hm75sctg 600 coolmos 70 29 sp4 yes aptc60hm70sctg 45 38 sp4 yes aptc60hm45sctg 800 coolmos 290 11 sp4 yes aptc80h29sctg 900 coolmos 120 23 sp4 yes aptc90h12sctg 1000 mos 7 450 14 sp4 yes aptm100h45sctg full bridge + series fred and sic parallel diodes v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc da or u2 sk or u3 500 mos8 65 43 sot-227 - apt58m50jcu2 apt58m50jcu3 600 coolmos 45 38 sot-227 - apt50n60jccu2 n/a 24 70 sp1 yes aptc60dam24ct1g aptc60skm24ct1g 18 107 sp4 yes aptc60dam18ctg n/a 900 coolmos 120 25 sot-227 - apt33n90jccu2 apt33n90jccu3 60 44 sp1 yes aptc90dam60ct1g aptc90skm60ct1g 1000 mos 8 330 20 sot-227 - apt26m100jcu2 apt26m100jcu3 180 30 sp1 yes aptm100da18ct1g n/a 1200 mos 8 560 15 sot-227 - apt20m120jcu2 apt20m120jcu3 300 23 sp1 yes aptm120da30ct1g n/a v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc dda dsk 600 coolmos 45 38 sp1 yes aptc60ddam45ct1g aptc60dskm45ct1g 70 29 sp1 yes aptc60ddam70ct1g aptc60dskm70ct1g dual chopper v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 500 mos 7 38 67 sp4 yes aptm50am38sctg 24 110 sp6 - aptm50am24scg 600 coolmos 35 54 sp4 yes aptc60am35sctg 24 70 sp4 yes aptc60am24sctg 18 107 sp6 - aptc60am18scg 900 coolmos 60 44 sp4 yes aptc90am60sctg 800 coolmos 150 21 sp4 yes aptc80a15sctg 100 32 sp4 yes aptc80a10sctg 75 43 sp6 - aptc80am75scg 1000 mos 7 130 49 sp6 - aptm100a13scg phase leg + series fred and sic parallel diodes v dss (v) mosfet type r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 600 coolmos 24 87 sp6-p yes aptc60tam21sctpag 1000 mos 7 350 50 sp6-p yes aptm100ta35sctpg triple phase leg sp3f sp6-p sp p 6 -p sp s 4 sp 6 chopper 35 new! new! new! new! new! new! new! new! sic mosfet power modules v ces (v) technology r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 600/1200 igbt & sic mosfet 110 20 sp3f yes aptmc120hr11ct3g 40 50 sp3f yes aptmc120hrm40ct3g t-type 3-level inverter v ces (v) technology r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 1200 sic mosfet 40 50 sot-227 - apt50mc120jcu2 20 100 - apt100mc120jcu2 boost chopper v ces (v) technology r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 600 sic mosfet 110 20 sp3f yes aptmc60tl11ct3ag 55 40 sp3f yes aptmc60tlm55ct3ag 20 110 sp3f yes aptmc60tlm20ct3ag 14 160 sp6 - aptmc60tlm14cag 3-level npc inverter v ces (v) technology r ds (on) (m 1 ) i d (a) t c =80o c package ntc part number 1200 sic mosfet 55 40 sp1 yes aptmc120am55ct1ag 20 100 sp1 yes aptmc120am20ct1ag 8 185 d3 - aptmc120am08cd3ag phase leg new! new! new! sot-227 sp1 sp3f d3 ag a g 3 ag n ew! n ew! n ew! sp6 3-level 36 non isolated packages all power modules rohs compliant lp4 diode power modules half pack sm2 sm3 sm1 sdm sm5 sm4 sm2-1 sm3-1 v rrm (v) diode type if (a) t c =80o c vf (v) t j =25o c package part number 1600 rectifier thyristor 75 1.4 sm4 msdt75-16 100 1.35 sm4 msdt100-16 150 1.35 sm4 msdt150-16 200 1.35 sm5 msdt200-16 3-phase bridge + thyristor v rrm (v) diode type if (a) per diode vf (v) t j =25o c package cathode to base cathode to base 600 fred 100 1.35 half-pack hu10260 hu10260r 200 hu20260 hu20260r 400 rectifier 300 1.1 sdm sdm30004 sdm30004r 30 schottky 180 0.55 half-pack hs18230 hs18230r 240 hs24230 hs24230r 35 180 0.70 hs18135 hs18135r 40 180 0.71 hs18140 hs18140r 240 0.56 hs24040 hs24040r 45 120 0.55 hs12045 hs12045r 180 0.72 hs18145 hs18145r 240 0.57 hs24045 hs24045r 100 120 0.91 hs123100 hs123100r 180 hs183100 hs183100r 240 0.86 hs243100 hs243100r 150 240 0.87 hs246150 hs246150r 180 240 0.88 hs247180 hs247180r 200 240 0.89 hs247200 hs247200r single diode - non isolated package v rrm (v) diode type if (a) t c =80o c vf (v) t j =25o c package 200 fred 500 1.1 lp4 aptdf500u20g 400 500 1.5 aptdf500u40g 600 450 1.8 aptdf450u60g 1000 430 2.3 aptdf430u100g 1200 400 2.5 aptdf400u120g single diode v rrm (v) diode type if (a) t c =80o c vf (v) t j =25o c package part number 1600 rectifier 40 1.3 sp1 aptdr40x1601g 90 1.3 sp1 aptdr90x1601g 800 1200 1600 1800 rectifier 30 1.6 sm1 msd30-08/12/16/18 50 1.5 sm1 msd50-08/12/16/18 50 1.45 sm2-1 msdm50-08/12/16/18 52 1.8 sm2 msd52-08/12/16/18 75 1.6 sm2 msd75-08/12/16/18 75 1.38 sm2-1 msdm75-08/12/16/18 100 1.9 sm3 msd100-08/12/16/18 100 1.7 sm2-1 msdm100-08/12/16/18 130 1.8 sm3 msd130-08/12/16/18 150 1.28 sm3-1 msdm150-08/12/16/18 160 1.65 sm3 msd160-08/12/16/18 200 1.55 sm3 msd200-08/12/16/18 200 1.31 sm3-1 msdm200-08/12/16/18 3-phase bridge 37 sp1 sp4 sp6 diode power modules sot-227 vj sf1 d1 v rrm (v) diode type if (a) t c =80o c vf (v) t j =25o c package style part number 200 fred 30 1.0 sot-227 apt30df20hj 60 1.0 sot-227 apt60df20hj 100 1.0 sp4 aptdf100h20g 200 1.0 sp6 aptdf200h20g 600 30 1.6 sot-227 apt30dl60hj 30 1.8 sp1 aptdf30h601g 30 1.8 sot-227 apt30df60hj 50 1.6 sot-227 apt50dl60hj 60 1.8 sot-227 apt60df60hj 60 1.8 sp1 aptdf60h601g 75 1.6 sot-227 apt75dl60hj 100 1.6 sot-227 apt100dl60hj 100 1.6 sp1 aptdf100h601g 200 1.6 sp6 aptdf200h60g 1000 30 2.1 sot-227 apt30df100hj 60 2.1 sot-227 apt60df100hj 100 2.1 sp4 aptdf100h100g 200 2.1 sp6 aptdf200h100g 1200 30 2.6 sp1 aptdf30h1201g 30 2.6 sot-227 apt30df120hj 35 1.6 sot-227 apt35dl120hj 50 1.6 sot-227 apt50dl120hj 60 2.6 sp1 aptdf60h1201g 60 2.6 sot-227 apt60df120hj 75 1.6 sot-227 apt75dl120hj 100 2.5 sp1 aptdf100h1201g 200 2.4 sp6 aptdf200h120g 1700 50 1.8 sot-227 apt50df170hj 75 1.8 sot-227 apt75df170hj 100 2.2 sp4 aptdf100h170g 200 2.2 sp6 aptdf200h170g 45 schottky 40 0.9 sot-227 apt40ds04hj 60 apt60ds04hj 100 40 apt40ds10hj 60 apt60ds10hj 200 30 apt30ds20hj 60 apt60ds20hj 200 rectifier 10 1.3 vj vj248m 400 vj448m 1600 40 sot-227 apt40dr160hj 90 apt90dr160hj 250-700 controlled avalanche recti?ers 10 1.3 vj vj247m 450-900 vj447m 660-1100 vj647m full bridge v rrm (v) diode type if (a) per diode vf/vtm (v) t j =25o c package style thyristor diode doubler thyristor doubler 800 1200 1600 rectifier thyristor 25 1.8 sf1 msfc25-08/12/16 mstc25-08/12/16 40 1.95 msfc40-08/12/16 mstc40-08/12/16 60 1.65 msfc60-08/12/16 mstc60-08/12/16 90 1.65 msfc90-08/12/16 mstc90-08/12/16 110 1.65 msfc110-08/12/16 mstc110-08/12/16 130 1.8 d1 msfc130-08/12/16 mstc130-08/12/16 160 1.7 msfc160-08/12/16 mstc160-08/12/16 thyristor & diode doubler s p4 sp s 6 38 all power modules rohs compliant diode power modules sd1 sd2 sp6 v rrm (v) diode type if (a) per diode vf (v) t j =25o c package common cathode common anode doubler 200 fred 400 1.0 sp6 aptdf400kk20g aptdf400aa20g aptdf400ak20g 600 1.6 aptdf400kk60g aptdf400aa60g aptdf400ak60g 1000 2.1 aptdf400kk100g aptdf400aa100g aptdf400ak100g 1200 2.4 aptdf400kk120g aptdf400aa120g aptdf400ak120g 1700 2.2 aptdf400kk170g aptdf400aa170g aptdf400ak170g 800-1200- 1600-1800 rectifier 36 1.15 sd1 mskd36-08/12/16/18 msad36-08/12/16/18 mscd36-08/12/16/18 60 mskd60-08/12/16/18 msad60-08/12/16/18 mscd60-08/12/16/18 70 mskd70-08/12/16/18 msad70-08/12/16/18 mscd70-08/12/16/18 100 mskd100-08/12/16/18 msad100-08/12/16/18 mscd100-08/12/16/18 120 mskd120-08/12/16/18 msad120-08/12/16/18 mscd120-08/12/16/18 165 sd2 mskd165-08/12/16/18 msad165-08/12/16/18 mscd165-08/12/16/18 200 mskd200-08/12/16/18 msad200-08/12/16/18 mscd200-08/12/16/18 200 fred 35 0.95 mini-mod uft7020 uft7020a uft7020d 60 0.98 twintower uft12520 uft12520a uft12520d 70 0.98 to-249 flat pack uft14020 uft14020a uft14020d 100 0.98 twintower uft20020 uft20020a uft20020d 1.25 uft20120 uft20120a uft20120d 200 0.98 uft40020 uft40020a uft40020d 300 35 1.20 mini-mod uft7130 uft7130a uft7130d 400 70 1.25 to-249 flat pack uft14140 uft14140a uft14140d 100 1.25 twintower uft20140 uft20140a uft20140d 500 35 1.20 mini-mod uft7150 uft7150a uft7150d 600 1.35 uft7260smxc uft7260smxa uft7260smxd 70 1.35 to-249 flat pack uft14260 uft14260a uft14260d 800 60 1.35 twintower uft12780 uft12780a uft12780d 70 1.35 to-249 flat pack uft14280 uft14280a uft14280d 30 schottky 30 0.47 to-249 flat pack fst16230 fst16230a fst16230d 35 250 0.55 twintower cpt50235 cpt50235a cpt50235d 300 0.65 cpt60035 cpt60035a cpt60035d 40 150 0.76 cpt30040 cpt30040a cpt30040d 45 40 0.53 mini-mod fst8145 fst8145a fst8145d 80 0.65 to-249 flat pack fst16145 fst16145a fst16145d 80 0.74 fst16045 fst16045a fst16045d 100 0.68 twintower cpt20145 cpt20145a cpt20145d 150 0.62 cpt30145 cpt30145a cpt30145d 150 0.77 cpt30045 cpt30045a cpt30045d 200 0.57 cpt40145 cpt40145a cpt40145d 250 0.55 cpt50145 cpt50145a cpt50145d 300 0.55 cpt60145 cpt60145a cpt60145d 0.65 cpt60045 cpt60045a cpt60045d 50 60 0.8 cpt12050 cpt12050a cpt12050d 80 0.74 to-249 flat pack fst16050 fst16050a fst16050d 150 0.78 twintower cpt30050 cpt30050a cpt30050d 60 0.82 cpt30060 cpt30060a cpt30060d 250 0.73 cpt50060 cpt50060a cpt50060d 80 200 0.89 cpt40080 cpt40080a cpt40080d 90 80 0.96 to-249 flat pack fst16090 fst16090a fst16090d 150 0.98 twintower cpt30090 cpt30090a cpt30090d 200 0.90 cpt40090 cpt40090a cpt40090d 100 40 0.82 mini-mod fst80100 fst80100a fst80100d 60 0.86 to-249 9 pins fst60100 fst60100a fst60100d 75 0.94 fst153100 fst153100a fst153100d 80 0.96 to-249 flat pack fst160100 fst160100a fst160100d 150 0.98 twin tower cpt300100 cpt300100a cpt300100d 200 0.91 cpt400100 cpt400100a cpt400100d 250 0.90 cpt500100 cpt500100a cpt500100d 300 0.85 cpt600100 cpt600100a cpt600100d 150 0.85 cpt600150 cpt600150a cpt600150d common cathode - common anode - doubler 10-pin to-249 to-249 flat pack mini-mod twin tower non isolated mini-mod surface mount sm1 sm3 sm5 sm2 sm4 sm6 x option for mini-mod surface mount package non isolated packages sp p 6 39 package outlines pin out location depends on the module con?guration. please refer to the product datasheet for pins assignment. all dimensions in millimeters. isotop? is a registered trademark of sgs thomson refer to web page for additional package outline drawings revised 8/29/97 revised 4/18/95 cathode anode c athode d 3 pak or to-268 to-220 [kf] to-220 2-lead to-220 3-lead to-247 3-lead to-247 2-lead t-max ? to-264 264 max? isotop ? or sot-227 40 lp4 sp1 sp3 d1 d3 d4 4.30.25 r5 40.80.5 450.25 17.50.5 11.50.5 51.60.5 17,6 0,5 4,5 0,25 r 5 64 0,25 73,4 0,5 40,8 0,5 11,5 0,5 17 12 28 1 power module outlines pin out location depends on the module con?guration. please refer to the product datasheet for pins assignment. all dimensions in millimeters. lp8 sp2 41 sp6 - 3 outputs sp4 sp6 - 4 outputs sp6 3-level sp6-p sd1 sp3f sf1 power module outlines pin out location depends on the module con?guration. please refer to the product datasheet for pins assignment. all dimensions in millimeters. 0 7 , 50 1 3 , 50 7 , 50 1 3 , 50 9 3 4 8 ?6,4 0 (4x) ?1 2 (4x) 1 2 14 r 6, 50 28 28 4 8 m 5 ( 3 x) 6 2 7 , 8 max 2 , 80 x 0 , 5 1 08 16,9 8 16 22 6, 50 1 5 0 7 , 50 1 3 , 50 1 7 5 ,1 0 7 , 50 1 3 , 50 1 8 , 20 1 2 14 9 3 4 8 ? 6,4 0 (4x) ?1 2 (4x) r 6, 50 6 2 27 27 4 8 4 8 m 5 (4x) 1 7 1 08 22 7 , 8 max 1 5 2 , 80 x 0 , 5 6, 50 1 5 0 7 , 50 1 3 , 50 7 , 50 1 3 , 50 1 2 14 9 3 4 8 ?6,4 0 (4x) ?1 2 (4x) 27 28 4 8 4 8 1 8 , 20 1 8 , 20 r 6, 50 6 2 m 5 (4x) 1 7 1 08 22 7 , 8 max 1 5 2 , 80 x 0 , 5 6, 50 1 5 42 sm3 sm4 sm3-1 sm2 sm2-1 sm5 power module outlines pin out location depends on the module con?guration. please refer to the product datasheet for pins assignment. all dimensions in millimeters. sd2 sm1 43 mini-mod surface mount mini-mod vj 9 pin to-249 to-249 twin tower sdm di m. inches m illi m eters a b c d f g h k l m a d k m c f g m in .m a x. m in .m a x. notes --- 1 . 240 --- 0.320 0.630 0.6 1 0 --- 0. 1 82 1 .260 .925 0.340 --- 0.640 . 1 00 0. 1 92 --- 3 1 .49 --- 8. 1 3 1 6.00 1 5.49 --- 4.62 32.00 23.49 8.64 --- 1 6.26 2.54 4.88 dia . b h h l 2.650 5/ 1 6 -1 8 unc 2.00 bsc 67.3 1 50.80 bsc standard polarity: base plate is cathode r everse polarity: base plate is anode half pak h j g a e k l f c d b notes 38.6 1 39.62 a 1 .56 . 1 30 . 1 60 . 1 60 1 . 1 92 .625 .505 1 /4 - 20 unc- 2 b .755 .775 .580 l j k h f g e c d b . 1 20 .495 .525 . 1 56 .745 . 1 52 1 . 1 82 .605 .725 3.05 1 2.57 3.96 1 3.34 3.86 1 8.92 30.02 1 5.37 1 8.42 3.30 1 2.83 4.06 1 4.73 dia . 1 9. 1 8 4.06 30.28 1 5.88 1 9.69 dia . sq . m a x i m u m di m. inches m ini m u m 1 .52 m ini m u m m illi m eter m a x i m u m std . polarity: base is cathode r ev . polarity: base is anode power module outlines pin out location depends on the module con?guration. please refer to the product datasheet for pins assignment. all dimensions in millimeters. www.microsemi.com ? 2012 microsemi corporation microsemi reserves the right to change, without notice, the speci?cations and information contained herein. sales of?ces china-shenzhen room a, 17/f, noble center no. 1006, 3rd fuzhong road, futian district shenzhen 518026, china tel: +86-755-82028976 fax: +86-755-82028977 china-shanghai room 405, no.318, fuzhou rd, huangpu district, shanghai, china tel: +86 21-63612788 fax: +86 21-63612790 hong kong 7/f., meeco industrial bldg 53-55 au pui wan st. fotan, shatin, nt., kong kong tel: +852-2692 1202 fax: +852-2691 0544 japan exos ebisu bldg. 4f, 1-24-14 ebisu, shibuya-ku, tokyo 150-0013, japan tel: +81-3-53263008 fax: +81-3-53263001 korea room# 906, seochotown trapalace, 1327, seocho-2dong, seoch-gu, seoul, korea (zip code 137-973) tel: +82-2-522-2631 fax: +82 31 783 2674 taiwan 10f-a, no. 105, sec 2, dun hua s. rd. taipei 106, taiwan, r.o.c tel: +886-2-6636 6588 fax: +886-2-2701 9051 asia-paci?c rim tel: +886-2-6636-6588 e-mail: rsmasia@microsemi.com eastern north america tel: (716) 699-5626 e-mail: rsmeast@microsemi.com central north america tel: (214) 763-4666 e-mail: rsmcen@microsemi.com western north america tel: (408) 307-9373 e-mail: rsmwest@microsemi.com europe, middle east, africa tel: +32-12-453 465 e-mail: rsmeurope@microsemi.com power semiconductor products 405 sw columbia street bend, oregon 97702 tel: 541-382-8028 toll free usa: 800-522-0809 fax: 541-388-0364 power modules 26 rue de campilleau 33520 bruges - france tel: +33-557 921515 fax: +33-556 479761 microsemi corporate of?ce one enterprise aliso viejo, ca 92656 tel: 949-380-6100 toll free usa: 800-713-4113 fax: 949-215-4996 ms5-001-12 |
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